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Machine translation
1. (WO1992003849) SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY USING THE SAME, CMOS SEMICONDUCTOR INTEGRATED CIRCUIT, AND PROCESS FOR FABRICATING THE SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1992/003849    International Application No.:    PCT/JP1991/001105
Publication Date: 05.03.1992 International Filing Date: 20.08.1991
IPC:
H01L 23/29 (2006.01), H01L 23/31 (2006.01), H01L 27/115 (2006.01)
Applicants: SEIKO EPSON CORPORATION [JP/JP]; 4-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163 (JP) (For All Designated States Except US).
TAKENAKA, Kazuhiro [JP/JP]; (JP) (For US Only).
FUJISAWA, Akira [JP/JP]; (JP) (For US Only)
Inventors: TAKENAKA, Kazuhiro; (JP).
FUJISAWA, Akira; (JP)
Agent: SUZUKI, Kisaburo; Seiko Epson Corporation, 4-1, Nishi-Shinjuku 2-chome, Shinjuku-ku, Tokyo 163 (JP)
Priority Data:
2/220905 21.08.1990 JP
Title (EN) SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY USING THE SAME, CMOS SEMICONDUCTOR INTEGRATED CIRCUIT, AND PROCESS FOR FABRICATING THE SEMICONDUCTOR DEVICE
(FR) DISPOSITIF A SEMI-CONDUCTEUR, MEMOIRE A SEMI-CONDUCTEUR L'UTILISANT, CIRCUIT INTEGRE A SEMI-CONDUCTEUR CMOS ET PROCEDE DE PRODUCTION DE CE DISPOSITIF
Abstract: front page image
(EN)A semiconductor device having a ferroelectric or polycrystalline silicon gate, wherein a humidity-resistant hydrogen-barrier film such as a TiN film or a TiON film is formed on the ferroelectric or polycrystalline silicon gate by the film-forming method which does not release hydrogen.
(FR)Dispositif à semi-conducteur comportant une porte en silicium ferroélectrique ou polycristallin sur laquelle on forme un film résistant à l'humidité faisant barrière à l'hydrogène, tel qu'un film de TiN ou TiON, grâce à un procédé filmogène ne provoquant pas de dégagement d'hydrogène.
Designated States: US.
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)