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Machine translation
1. (WO1992001089) CRYSTALLISATION PROCESS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1992/001089    International Application No.:    PCT/GB1991/001086
Publication Date: 23.01.1992 International Filing Date: 03.07.1991
IPC:
C30B 1/02 (2006.01), H01L 21/20 (2006.01)
Applicants: GEC-MARCONI LIMITED [GB/GB]; The Grove, Warren Lane, Stanmore, Middlesex HA7 4LY (GB) (For All Designated States Except US).
STOEMENOS, John [GR/GR]; (GR) (For US Only)
Inventors: STOEMENOS, John; (GR)
Agent: GEORGE, Sidney, Arthur; The General Electric Company, plc, GEC Patent Department (Wembley Office), Hirst Research Centre, East Lane, Wembley, Middlesex HA9 7PP (GB)
Priority Data:
9014723.2 03.07.1990 GB
Title (EN) CRYSTALLISATION PROCESS
(FR) PROCEDE DE CRISTALLISATION
Abstract: front page image
(EN)In a process for the crystallisation of amorphous silicon, gold is disposed in intimate contact with the amorphous silicon, and the silicon and the gold are annealed at a temperature of at least 400 °C. The amorphous silicon is preferably deposited on a substrate, with the gold disposed over the silicon or between the silicon and the substrate. The gold may be deposited as a matrix of dots.
(FR)Dans un procédé de cristallisation de silicium amorphe, de l'or est placé en contact intime avec le silicium amorphe, et le silicum et l'or sont recuits à une température d'au moins 400 °C. Le silicium amorphe est de préférence déposé sur un substrat, l'or étant placé sur le silicium ou entre le silicium et le substrat. L'or peut être déposé sous forme d'une matrice de points.
Designated States: JP, US.
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE).
Publication Language: English (EN)
Filing Language: English (EN)