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1. WO1992001089 - CRYSTALLISATION PROCESS

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Publication Number WO/1992/001089
Publication Date 23.01.1992
International Application No. PCT/GB1991/001086
International Filing Date 03.07.1991
IPC
C30B 1/02 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
1Single-crystal growth directly from the solid state
02by thermal treatment, e.g. strain annealing
H01L 21/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
CPC
C30B 1/023
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
1Single-crystal growth directly from the solid state
02by thermal treatment, e.g. strain annealing
023from solids with amorphous structure
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
H01L 21/02381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02381Silicon, silicon germanium, germanium
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/02595
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02587Structure
0259Microstructure
02595polycrystalline
H01L 21/02672
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
02672using crystallisation enhancing elements
Applicants
  • GEC-MARCONI LIMITED [GB]/[GB] (AllExceptUS)
  • STOEMENOS, John [GR]/[GR] (UsOnly)
Inventors
  • STOEMENOS, John
Agents
  • GEORGE, Sidney, Arthur
Priority Data
9014723.203.07.1990GB
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) CRYSTALLISATION PROCESS
(FR) PROCEDE DE CRISTALLISATION
Abstract
(EN) In a process for the crystallisation of amorphous silicon, gold is disposed in intimate contact with the amorphous silicon, and the silicon and the gold are annealed at a temperature of at least 400 °C. The amorphous silicon is preferably deposited on a substrate, with the gold disposed over the silicon or between the silicon and the substrate. The gold may be deposited as a matrix of dots.
(FR) Dans un procédé de cristallisation de silicium amorphe, de l'or est placé en contact intime avec le silicium amorphe, et le silicum et l'or sont recuits à une température d'au moins 400 °C. Le silicium amorphe est de préférence déposé sur un substrat, l'or étant placé sur le silicium ou entre le silicium et le substrat. L'or peut être déposé sous forme d'une matrice de points.
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