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1. WO1992001079 - PROCESS FOR DEPOSITING THIN LAYERS BY LASER PULSE VAPOUR DEPOSITION

Publication Number WO/1992/001079
Publication Date 23.01.1992
International Application No. PCT/DE1991/000533
International Filing Date 27.06.1991
IPC
C23C 14/28 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
28by wave energy or particle radiation
CPC
C23C 14/28
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
28by wave energy or particle radiation
Applicants
  • MAI, Hermann [DE]/[DE]
  • DIETSCH, Reiner [DE]/[DE]
  • SCHUBERT, Klaus [DE]/[DE]
Inventors
  • MAI, Hermann
  • DIETSCH, Reiner
  • SCHUBERT, Klaus
Common Representative
  • MAI, Hermann
Priority Data
AP HO1L/342 455-403.07.1990DD
AP HO1L/342 456-203.07.1990DD
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR ABSCHEIDUNG DÜNNER SCHICHTEN MITTELS LASERIMPULS-GASPHASENABSCHEIDUNG (LPVD)
(EN) PROCESS FOR DEPOSITING THIN LAYERS BY LASER PULSE VAPOUR DEPOSITION
(FR) PROCEDE DE DEPOT DE MINCES COUCHES PAR IMPULSIONS LASER DANS LA PHASE GAZEUSE (LPVD)
Abstract
(DE) Die Erfindung betrifft ein Verfahren zur Abscheidung dünner Schichten mittels Laserimpuls-Gasphasenabscheidung (LPVD). Objekte, auf die sich die Erfindung bezieht, sind LPVD-Anlagen zur Herstellung dünner und dünnster Schichten, insbesondere auf den Gebieten der Optik, Röntgenoptik und der Mikroelektronik. Erfindungsgemäss wird bei einer Verfahrensvariante der auf die Oberfläche eines gekrümmten Targets (T) fokussierte Impulslaserstrahl (L) über einen drehbar gelagerten Planspiegel (PS) und einen Zylinderspiegel (ZS) geführt, wobei die Bewegung des Impulslaserstrahles auf der gekrümmten Oberfläche des Targets durch die Kippung des Planspiegels um eine in Strahlrichtung durch die durch seine Oberfläche aufgespannte Ebene verlaufende Achse erfolgt, und bei einer anderen Verfahrensvariante erfolgt, erfindungsgemäss eine Schwenkung des Substrates (S) synchron zur Bewegung des Impulslaserstrahles auf der gekrümmten Oberfläche des Targets.
(EN) A process is disclosed for depositing thin layers by laser pulse vapour deposition (LPVD). LPVD installations are disclosed for producing thin and extra-thin layers, in particular in optics, X-ray optics and microelectronics. In an embodiment of the process, a pulse laser beam (L) focussed on the surface of a curved target (T) is moved by a rotatably mounted plane reflector (PS) and by a cylindrical reflector (ZS). The pulse laser beam is moved on the curved surface of the target by swinging the plane reflector around an axis that extends in the direction of the beam through a plane drawn across its surface. In another embodiment of the invention, the substrate (S) pivots in synchronism with the movement of the pulse laser beam on the curved surface of the target.
(FR) Un procédé permet de faire déposer de minces couches par impulsions laser dans la phase gazeuse (LPVD). Des installation LPVD servent à produire des couches minces et ultra-minces, notamment dans les domaines optique, optique radiographique et microélectronique. Selon un mode de réalisation du procédé, un faisceau de laser impulsionnel (L) focalisé sur la surface d'une cible courbe (T) est guidé par un réflecteur plan rotatif (PS) et par un réflecteur cylindrique (ZS). Le faisceau de laser impulsionnel est déplacé sur la surface courbe de la cible par basculement du réflecteur plan autour d'un axe qui s'étend dans le sens du faisceau à travers un plan qui traverse sa surface. Dans un autre mode de réalisation du procédé, le substrat (S) pivote synchroniquement par rapport au déplacement du faisceau de laser impulsionnel sur la surface courbe de la cible.
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