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1. (WO1991018424) MAGNETORESISTANCE EFFECT ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/018424 International Application No.: PCT/JP1991/000671
Publication Date: 28.11.1991 International Filing Date: 20.05.1991
IPC:
G11B 5/39 (2006.01) ,H01L 43/10 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127
Structure or manufacture of heads, e.g. inductive
33
Structure or manufacture of flux-sensitive heads
39
using magneto-resistive devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
Applicants:
UBE INDUSTRIES, LTD. [JP/JP]; 12-32, Nishihonmachi 1-chome Ube-shi Yamaguchi 755, JP (AllExceptUS)
KANEGAFUCHI CHEMICAL INDUSTRY CO., LTD. [JP/JP]; 2-4, Nakanoshima 3-chome Kita-ku Osaka-shi Osaka 530, JP (AllExceptUS)
NIPPON STEEL CORPORATION [JP/JP]; 6-3, Ohte-machi 2-chome Chiyoda-ku Tokyo 100-71, JP (AllExceptUS)
TDK CORPORATION [JP/JP]; 13-1, Nihonbashi 1-chome Chuo-ku Tokyo 103, JP (AllExceptUS)
TOSOH CORPORATION [JP/JP]; 4560, Kaisei-cho Shinnanyo-shi Yamaguchi 746, JP (AllExceptUS)
TOYO BOSEKI KABUSHIKI KAISHA [JP/JP]; 2-8, Dojimahama 2-chome Kita-ku Osaka-shi Osaka 530, JP (AllExceptUS)
NIPPON MINING CO., LTD. [JP/JP]; 10-1, Toranomon 2-chome Minato-ku Tokyo 105, JP (AllExceptUS)
NEC CORPORATION [JP/JP]; 7-1, Shiba 5-chome Minato-ku Tokyo 108, JP (AllExceptUS)
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006, Oaza Kadoma Kadoma-shi Osaka 571, JP (AllExceptUS)
SEISAN KAIHATSU KAGAKU KENKYUSHO [JP/JP]; 15, Shimogamo Morimoto-cho Sakyo-ku Kyoto-shi Kyoto 606, JP (AllExceptUS)
SHINJO, Teruya [JP/JP]; JP (UsOnly)
YAMAMOTO, Hidefumi [JP/JP]; JP (UsOnly)
TAKADA, Toshio [JP/JP]; JP (UsOnly)
Inventors:
SHINJO, Teruya; JP
YAMAMOTO, Hidefumi; JP
TAKADA, Toshio; JP
Agent:
AOYAMA, Tamotsu; Aoyama & Partners IMP Building 3-7, Shiromi 1-chome Chuo-ku, Osaka-shi Osaka 540, JP
Priority Data:
2/13160221.05.1990JP
2/15566514.06.1990JP
2/24307612.09.1990JP
2/24466914.09.1990JP
3/7882411.04.1991JP
Title (EN) MAGNETORESISTANCE EFFECT ELEMENT
(FR) ELEMENT A EFFET DE MAGNETORESISTANCE
Abstract:
(EN) A magnetoresistance effect element which comprises a substrate and at least two layers of magnetic thin films formed on the substrate via non-magnetic thin film layers. The element is characterized in that the coercive forces of the magnetic thin films adjoining each other via the non-magnetic thin film layer are different and the thicknesses of the magnetic and non-magnetic thin film layers are 200 angstroms or less respectively. The element exhibits a large rate of resistance change of several to several tens % in a small external magnetic field of about several to several tens Oe. Therefore, a highly sensitive magnetic sensor of magnetoresistance type and a magnetic head of magnetoresistance type capable of high-density magnetic recording can be provided.
(FR) L'invention se rapporte à un élément à effet de magnétorésistance, qui comprend un substrat et au moins deux couches de minces films magnétiques déposées sur le substrat par l'intermédiaire de couches de minces films non magnétiques. Cet élément se caractérise en ce que les forces coercitives qui amènent les divers films magnétiques à se joindre entre eux via la couche des films non magnétiques sont différentes et en ce que les épaisseurs des couches de films non magnétiques sont égales à 200 angströms ou moins respectivement. L'élément présente un taux élevé de variation de la résistance de plusieurs pourcents à plusieurs dizaines de pourcents dans un petit champ magnétique externe d'environ plusieurs ÷rsteds à plusieurs dizaines d'÷rsteds. Grâce à un tel élément, on peut obtenir un capteur magnétique hautement sensible du type magnétorésistance et une tête magnétique du type magnétorésistance capable d'effectuer des enregistrements magnétiques haute densité.
Designated States: US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP0483373US5315282