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1. (WO1991018421) LASER DIODE, METHOD FOR MAKING LASER DIODE AND METHOD FOR MONITORING PERFORMANCE OF LASER DIODE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/018421 International Application No.: PCT/CA1991/000148
Publication Date: 28.11.1991 International Filing Date: 06.05.1991
Chapter 2 Demand Filed: 25.11.1991
IPC:
H01S 5/026 (2006.01) ,H01S 5/0683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
026
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
06
Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
068
Stabilisation of laser output parameters
0683
by monitoring the optical output parameters
Applicants:
NORTHERN TELECOM LIMITED [CA/CA]; World Trade Centre of Montreal 380 St. Antoine Street West, 8th Floor Montreal, Quebec H2Y 3Y4, CA
Inventors:
KWA, Peter, Tjing, Hak; CA
Agent:
JUNKIN, Charles, William; Northern Telecom Limited Patent Department P.O. Box 3511, Station "C" Ottawa, Ontario K1Y 4H7, CA
Priority Data:
522,01511.05.1990US
Title (EN) LASER DIODE, METHOD FOR MAKING LASER DIODE AND METHOD FOR MONITORING PERFORMANCE OF LASER DIODE
(FR) DIODE LASER, PROCEDE DE FABRICATION D'UNE DIODE LASER, ET PROCEDE DE CONTROLE DU FONCTIONNEMENT D'UNE DIODE LASER
Abstract:
(EN) A monolithically integrated structure comprises a laser diode (60), a photodetector diode (62) and a reference diode (64) which are monolithically integrated on a common substrate (10). The photodetector diode (62) is optically coupled to the laser diode (60). The reference diode (64) is substantially identical to the photodetector diode (62) and optically decoupled from the laser diode (60). When substantially equal reverse biases are applied to the photodetector diode (62) and the reference diode (64), the reference diode (64) conducts a leakage current which can be used to substantially cancel the leakage current of the photodetector diode (62). The monolithically integrated structure may also include a modulator diode (100) which is monolithically integrated on the common substrate (10) and optically coupled to the laser diode (60). The monolithically integrated structure is useful in optical communications systems.
(FR) Une structure à intégration monolithe comporte une diode laser (60), une diode détectrice photosensible (62) et une diode de référence intégrées de manière monolithe sur un même substrat (10). La diode détectrice photosensible (62) est couplée de manière optique à la diode laser (60). La diode de référence (64) est sensiblement identique à la diode détectrice photosensible (62) et optiquement découplée de la diode laser (60). Lorsque l'on applique des polarisations inverses, et sensiblement égales, à la diode détectrice photosensible (62) et à la diode de référence (64), cette dernière est traversée par un courant de fuite apte à neutraliser sensiblement le courant de fuite de la diode détectrice photosensible (62). Ladite structure peut également comprendre une diode modulatrice (100) intégrée de manière monolithe audit substrat (10) et couplée de manière optique à la diode laser (60). La structure à intégration monolithe est utile aux systèmes de communication optique.
Designated States: CA, JP, SE
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0530212JPH05508738CA2079593