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1. (WO1991018128) HALOGEN-ASSISTED CHEMICAL VAPOR DEPOSITION OF DIAMOND
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/018128 International Application No.: PCT/US1991/003312
Publication Date: 28.11.1991 International Filing Date: 16.05.1991
Chapter 2 Demand Filed: 21.10.1991
IPC:
C23C 16/27 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
26
Deposition of carbon only
27
Diamond only
Applicants:
HOUSTON AREA RESEARCH CENTER [US/US]; 4802 Research Forest Drive The Woodlands, TX 77381, US
Inventors:
PATTERSON, Donald, E.; US
HAUGE, Robert, H.; US
CHU, C., Judith; US
MARGRAVE, John, L.; US
Agent:
ROBINS, W., Ronald ; Vinson & Elkins 3300 First City Tower 1001 Fannin Houston, TX 77002, US
Priority Data:
528,80424.05.1990US
Title (EN) HALOGEN-ASSISTED CHEMICAL VAPOR DEPOSITION OF DIAMOND
(FR) DEPOT EN PHASE VAPEUR DE DIAMANT PAR VOIE CHIMIQUE, ASSISTE PAR HALOGENE
Abstract:
(EN) The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen and (3) a halogen through a reactor (56) over the substrate (72) material. The reactant gases may be premixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pretreatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pre-treatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.
(FR) L'invention se rapporte à un procédé servant à déposer des films et des particules de diamant sur une variété de substrats, par écoulement d'un gaz ou d'un mélange gazeux capable de fournir du carbone, de l'hydrogène et un halogène à travers un réacteur (56) sur le matériau du substrat (72). Les gaz réactifs peuvent être mélangés au préalable avec un gaz inerte afin de maintenir une faible teneur générale en carbone et une forte teneur générale en hydrogène, en pourcent en volume, du mélange gazeux. Le prétraitement des gaz réactifs jusqu'à un état d'énergie élevée n'est pas nécessaire contrairement à la plupart des procédés de dépôt de diamant par voie chimique connus de l'état de la technique. Le prétraitement n'étant pas nécessaire, il est possible d'utiliser le procédé pour des substrats de quasiment toutes les dimensions, formes ou configurations voulues.
Designated States: CA, DK, ES, JP
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0557281JPH05506483CA2081778