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1. (WO1991018125) SPUTTERING TARGET AND PRODUCTION THEREOF
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/018125 International Application No.: PCT/JP1991/000639
Publication Date: 28.11.1991 International Filing Date: 15.05.1991
IPC:
C04B 35/58 (2006.01) ,C23C 14/34 (2006.01)
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
515
based on non-oxides
58
based on borides, nitrides or silicides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
Applicants:
KABUSHIKI KAISHA TOSHIBA [JP/JP]; 72, Horikawa-cho Saiwai-ku Kawasaki-shi Kanagawa 210, JP (AllExceptUS)
SATOU, Michio [JP/JP]; JP (UsOnly)
YAMANOBE, Takasi [JP/JP]; JP (UsOnly)
KAWAI, Mituo [JP/JP]; JP (UsOnly)
KOMATU, Tooru [JP/JP]; JP (UsOnly)
SHIZU, Hiromi [JP/JP]; JP (UsOnly)
YAGI, Noriaki [JP/JP]; JP (UsOnly)
Inventors:
SATOU, Michio; JP
YAMANOBE, Takasi; JP
KAWAI, Mituo; JP
KOMATU, Tooru; JP
SHIZU, Hiromi; JP
YAGI, Noriaki; JP
Agent:
HATANO, Hisashi ; 6th floor, My Building 4-1, Nishishinbashi 3-chome Minato-ku Tokyo 105, JP
Priority Data:
2/12305415.05.1990JP
Title (EN) SPUTTERING TARGET AND PRODUCTION THEREOF
(FR) CIBLE DE PULVERISATION ET PRODUCTION DE CETTE DERNIERE
Abstract:
(EN) A sputtering target having a high-density fine mixed texture wherein metallic silicide molecules are linked in a chain to form a metallic silicide phase and noncontinuous silicon phases are present in the interstices of the metallic silicide phase and containing 100 ppm or less of carbon. Since the target has a high density and a high strength, the amount of particles generated in sputtering is reduced. Since the carbon content is reduced so as to prevent the carbon from being mixed into the formed film, it is possible to produce semiconductor products with a high quality and a high accuracy.
(FR) Cible de pulvérisation présentant une fine texture mélangée de densité élevée, dans laquelle des molécules de siliciure métallique sont liées en une chaîne pour former une phase de siliciure métallique et des phases de silicium non continues sont présentes dans les interstices de la phase de siliciure métallique, et contenant une quantité de carbone inférieure ou égale à 100 ppm. Etant donné que la cible présente une densité et une résistance élevées, la quantité de particules produites pendant la pulvérisation est réduite. Etant donné que la teneur en carbone est reduite de manière à empêcher le carbone de se mélanger au film formé, il est possible de produire des semi-conducteurs de grande qualité et de précision élevée.
Designated States: JP, KR, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP0483375US5409517US5508000US5612571KR1019940010456*