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1. (WO1991017952) PROCESS FOR PRODUCING CRYSTALLINE SILICON INGOT IN A FLUIDIZED BED REACTOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017952 International Application No.: PCT/US1991/000476
Publication Date: 28.11.1991 International Filing Date: 23.01.1991
Chapter 2 Demand Filed: 10.12.1991
IPC:
B01J 8/18 (2006.01) ,B01J 8/42 (2006.01) ,C01B 33/027 (2006.01) ,C30B 15/00 (2006.01) ,C30B 15/30 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
8
Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
18
with fluidised particles
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
8
Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
18
with fluidised particles
24
according to "fluidised-bed" technique
42
with fluidised bed subjected to electric current or to radiations
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
02
Silicon
021
Preparation
027
by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
30
Mechanisms for rotating or moving either the melt or the crystal
Applicants:
COMMTECH DEVELOPMENT PARTNERS II [US/US]; 545 Middlefield Road, Suite 180 Menlo Park, CA 94025, US
Inventors:
SANJURJO, Angel; US
Agent:
REED, Dianne, E. ; Irell & Manella 545 Middlefield Road Suite 200 Menlo Park, CA 94025, US
Priority Data:
525,90018.05.1990US
Title (EN) PROCESS FOR PRODUCING CRYSTALLINE SILICON INGOT IN A FLUIDIZED BED REACTOR
(FR) PROCEDE PERMETTANT DE PRODUIRE DES LINGOTS DE SILICIUM CRISTALLIN DANS UN REACTEUR A LIT FLUIDISE
Abstract:
(EN) Crystalline silicon ingots are produced directly from an internally heated bed of silicon particles.
(FR) On produit directement à partir d'un lit de particules de silicium chauffé à l'intérieur, des lingots de silicium cristallin.
Designated States: JP
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)