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1. (WO1991017575) OPTOELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017575 International Application No.: PCT/GB1991/000702
Publication Date: 14.11.1991 International Filing Date: 01.05.1991
Chapter 2 Demand Filed: 27.11.1991
IPC:
H01L 27/15 (2006.01) ,F01N 3/28 (2006.01) ,H01L 27/14 (2006.01) ,H01L 33/00 (2010.01) ,H01S 5/00 (2006.01) ,H01S 5/026 (2006.01) ,H01S 5/22 (2006.01) ,H01S 5/223 (2006.01) ,H01S 5/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15
including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
F MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
01
MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
N
GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL-COMBUSTION ENGINES
3
Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust
08
for rendering innocuous
10
by thermal or catalytic conversion of noxious components of exhaust
24
characterised by constructional aspects of converting apparatus
28
Construction of catalytic reactors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
026
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
20
Structure or shape of the semiconductor body to guide the optical wave
22
having a ridge or a stripe structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
20
Structure or shape of the semiconductor body to guide the optical wave
22
having a ridge or a stripe structure
223
Buried stripe structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
50
Amplifier structures not provided for in groups H01S5/02-H01S5/30100
Applicants:
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY [GB/GB]; 81 Newgate Street London EC1A 7AJ, GB (AllExceptUS)
WAKE, David [GB/GB]; GB (UsOnly)
Inventors:
WAKE, David; GB
Agent:
DUTTON, Erica, Lindley, Graham; Intellectual Property Department British Telecom 151 Gower Street London WC1E 6BA, GB
Priority Data:
9009726.201.05.1990GB
Title (EN) OPTOELECTRONIC DEVICE
(FR) DISPOSITIF OPTOELECTRONIQUE
Abstract:
(EN) An optoelectronic device comprises a first n-type epitaxial layer (2), an active layer (3) comprising a second epitaxial layer grown on said first layer and a third epitaxial layer (8) of p-type material in the form of a ridge structure (8') selectively grown on or over the active layer, in which a p-n junction is formed in the active layer between a region of p-type material aligned beneath said ridge, and adjacent n-type regions of the active layer, the underlying first layer (2) being wholly n-type. A method of fabricating such a device involves growing an all n-type planar, forming a dielectric mask (5) thereon, growing by selective epitaxy the ridge structure of p-type material, simultaneously forming the p-n junction by diffusion thereon.
(FR) Un dispositif optoélectronique comprend une première couche épitaxiale de type n (2), une couche active (3) comprenant une seconde couche épitaxiale qu'on fait pousser sur ladite première couche et une troisième couche épitaxiale (8) composée d'un matériau de type p sous forme d'une structure à crête (8') qu'on fait pousser de manière sélective sur la couche active ou par-dessus celle-ci, et dans laquelle une jonction p-n est formée dans la couche active entre une région d'un matériau de type p alignée sous ladite crête, et des régions adjacentes de type n de la couche active, la première couche sous-jacente (2) étant entièrement de type n. Un procédé de fabrication de ce dispositif consiste à faire pousser une structure plane entièrement de type n, à former un masque diélectrique (5) par-dessus, à faire pousser par épitaxie sélective la structure à crête faite d'un matériau de type p, et à former simultanément la junction p-n par diffusion sur ladite structure.
Designated States: AU, CA, JP, KR, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0527827US5446751JPH05507175CA2081898KR1019930700981AU1991077587