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1. (WO1991017574) ETCHING INDIUM TIN OXIDE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017574 International Application No.: PCT/US1991/003065
Publication Date: 14.11.1991 International Filing Date: 03.05.1991
IPC:
C04B 41/53 (2006.01) ,C04B 41/91 (2006.01) ,H01L 31/18 (2006.01)
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
41
After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
53
involving the removal of part of the materials of the treated article
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
41
After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
80
of only ceramics
91
involving the removal of part of the materials of the treated articles, e.g. etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
EASTMAN KODAK COMPANY [US/US]; 343 State Street Rochester, NY 14650, US
Inventors:
ROSELLE, Paul, L.; US
PAZ-PUJALT, Gustavo, Roberto; US
WEXLER, Ronald, Myron; US
Agent:
OWENS, Raymond, L.; 343 State Street Rochester, NY 14650-2201, US
Priority Data:
520,48607.05.1990US
Title (EN) ETCHING INDIUM TIN OXIDE
(FR) ATTAQUE DE L'OXYDE D'INDIUM ETAIN
Abstract:
(EN) ITO is etched by a plasma containing CH3. gas.
(FR) ITO est attaqué par un plasma contenant CH3. gazeux.
Designated States: JP
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0483319