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1. (WO1991017571) PHOTO DETECTORS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017571 International Application No.: PCT/GB1991/000693
Publication Date: 14.11.1991 International Filing Date: 30.04.1991
Chapter 2 Demand Filed: 19.11.1991
IPC:
H01L 31/10 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 31/0352 (2006.01) ,H01L 31/12 (2006.01) ,H01L 33/00 (2010.01) ,H01S 5/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0352
characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
Applicants:
BT&D TECHNOLOGIES LIMITED [GB/GB]; Whitehouse Road Ipswich Suffolk IP1 5PB, GB (AllExceptUS)
PLUMB, Richard, Gordon [GB/GB]; GB (UsOnly)
Inventors:
PLUMB, Richard, Gordon; GB
Agent:
WOLFF, Eric; BT&D Technologies Limited Whitehouse Road Ipswich Suffolk IP1 5PB, GB
Priority Data:
9009753.601.05.1990GB
Title (EN) PHOTO DETECTORS
(FR) PHOTODETECTEURS
Abstract:
(EN) Monitoring output of semiconductor optical sources. A monitor photo detector comprises a photodiode having a photosensitive region made up from several spaced active areas, thereby to provide a device region capable of exhibiting photo responsivity which is less than the total active area of the device. Conveniently these active areas may be arranged in groups. The electrical output of selected areas or groups of areas or both may be arranged to be enabled or disabled as appropriate to provide the required photo responsivity of the device.
(FR) L'invention se rapporte au contrôle de la sortie de sources optiques à semiconducteurs. A cet effet, un photodétecteur de contrôle comprend une photodiode ayant une région photosensible composée de plusieurs zones actives espacées, de façon à former dans un dispositif source une région capable de présenter une photoréactivité qui est inférieure à la zone active totale du dispositif. Ces zones actives peuvent être de préférence disposées en groupes. La puissance électrique des zones choisies et/ou des groupes de zones choisis peut être conçue de façon à pouvoir être validée ou invalidée selon les besoins, pour conférer au dispositif la photoréactivité requise.
Designated States: AU, CA, JP, KR, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0527829US5315104JPH05508739CA2081020KR1019930700980AU1991077907