Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO1991017570) INSULATED GATE BIPOLAR TRANSISTOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017570 International Application No.: PCT/GB1991/000673
Publication Date: 14.11.1991 International Filing Date: 26.04.1991
Chapter 2 Demand Filed: 13.11.1991
IPC:
H01L 29/06 (2006.01) ,H01L 29/739 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
Applicants:
LUCAS INDUSTRIES PUBLIC LIMITED COMPANY [GB/GB]; Brueton House New Road Solihull West Midlands B91 3TX, GB (AllExceptUS)
FINNEY, Adrian, David [GB/GB]; GB (UsOnly)
Inventors:
FINNEY, Adrian, David; GB
Agent:
GIBSON, Stewart, Harry; Urquhart-Dykes & Lord Business Technology Centre Senghennydd Road Cardiff CF2 4AY, GB
Priority Data:
9009558.927.04.1990GB
Title (EN) INSULATED GATE BIPOLAR TRANSISTOR
(FR) TRANSISTOR BIPOLAIRE A GRILLE ISOLEE
Abstract:
(EN) An insulated gate bipolar transistor comprises four regions of alternate conductivity type semiconductor material between anode and cathode electrodes (11, 18). An insulated gate electrode (20) establishes current flow from the cathode (18) into a base region (12) adjacent the anode region (10). The anode region (10) has a portion (17) which is brought to the surface on which the cathode electrode (18) is disposed. High voltage field rings (26, 27, 29) are formed in the surface of the base region (12) between the anode and cathode regions (17, 14), the field rings serving to maintain the width of the depletion layers (13, 15) of the anode-base and cathode-base PN junctions.
(FR) Un transistor bipolaire à grille isolée comprend quatre zones de matériau semiconducteur du type à conductivité alternée, situées entre les électrodes d'anode et de cathode (11, 18). Une électrode à grille isolée (20) crée un courant circulant de la cathode (18) à une zone de base (12) contiguë à la zone de l'anode (10). La zone de l'anode (10) prossède une partie (17) amenée vers la surface sur laquelle est située l'électrode cathodique (18). Des anneaux de champ à haute tension (26, 27, 29) se trouvent sur la surface de la zone de base (12) entre les zones de l'anode et de la cathode (17, 14) et servent à maintenir la largeur des couches d'appauvrissement (13, 15) des jonctions PN des bases anodique et cathodique.
Designated States: JP, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)