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1. (WO1991017569) SUPERCONDUCTING-SEMICONDUCTING CIRCUITS, DEVICES AND SYSTEMS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017569 International Application No.: PCT/US1991/001907
Publication Date: 14.11.1991 International Filing Date: 21.03.1991
Chapter 2 Demand Filed: 29.10.1991
IPC:
H01L 27/092 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
088
the components being field-effect transistors with insulated gate
092
complementary MIS field-effect transistors
Applicants:
MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION [US/US]; 3500 West Balcones Center Drive Austin, TX 78759, US
Inventors:
KROGER, Harry; US
GHOSHAL, Uttam, Shamalindu; US
Agent:
SIGMOND, David, M. ; Microelectronics and Computer Technology Corporation 3500 West Balcones Center Drive Austin, TX 78759, US
Priority Data:
518,00402.05.1990US
Title (EN) SUPERCONDUCTING-SEMICONDUCTING CIRCUITS, DEVICES AND SYSTEMS
(FR) SYSTEMES, DISPOSITIFS, ET CIRCUITS SUPRACONDUCTEURS/SEMI-CONDUCTEURS
Abstract:
(EN) The field of the invention is superconducting field effect transistors (SFETs) for interconnecting conventional semiconductor circuits. The problem is that current SFETs have zero power gain and do not produce an output voltage signal large enough to enable an SFET string of logic gates to be operated without additional logic level voltage restoration. The solution is a hybrid superconducting-semiconducting field effect transistor-like circuit element comprised of a superconducting field effect transistor (16) and a closely associated cryogenic semiconductor inverter (10) for providing signal gain. The hybrid circuit can be used as a nearly ideal pass gate in cryogenic applications.
(FR) On décrit des transistors à effet de champ supraconducteurs (SFET) servant à interconnecter les circuits semi-conducteurs traditionnels. Malheureusement, les SFET actuels ont une amplification de puissance nulle et ne produisent pas de signal de tension de sortie suffisamment grand pour permettre l'actionnement d'une série de portes logiques de SFET sans rétablissement supplémentaire de la tension du niveau logique. Cependant, on a mis au point un élément de circuit supraconducteur/semi-conducteur hybride semblable à un transistor à effet de champ et constitué d'un transistor supraconducteur à effet de champ (16) et d'un inverseur semi-conducteur cryogénique (10) destiné à assurer l'amplification du signal. Le circuit hybride peut servir de porte de passage presque parfaite à usage cryogénique.
Designated States: CA, JP
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
JPH05507587