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1. (WO1991017566) TUNGSTEN DISILICIDE CVD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017566 International Application No.: PCT/US1991/003049
Publication Date: 14.11.1991 International Filing Date: 03.05.1991
IPC:
C23C 16/42 (2006.01) ,H01L 21/285 (2006.01) ,H01L 21/3205 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42
Silicides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
Applicants:
BALZERS AKTIENGESELLESCHSAFT [LI/LI]; LI-9496 Balzers, LI
Inventors:
HILLMAN, Joseph, T.; US
PRICE, J., B.; US
TRIGGS, William, M.; US
Agent:
GLAZER, Marvin, A. ; Cahill, Sutton & Thomas 155 Park One 2141 East Highland Avenue Phoenix, AZ 85016, US
Priority Data:
519,53804.05.1990US
Title (EN) TUNGSTEN DISILICIDE CVD
(FR) DEPOSITION EN PHASE VAPEUR PAR PROCEDE CHIMIQUE DE DISILICIURE DE TUNGSTENE
Abstract:
(EN) Tungsten disilicide (WSIx) films are deposited onto doped or undoped polysilicon by reducing WF6 with a mixture of dichlorosilane (SiH2Cl2) and disilane (Si2H6). The addition of disilane provides a mechanism for increasing the resistivity (silicon to tungsten ratio) of the film (fig. 1) without adversely affecting the uniformity (fig. 2) or deposition rate of the film (fig. 3). A high silicon to tungsten ratio prevents degradation of the silicide film and the underlaying polysilicon film during subsequent growth of an oxide (SiO2) dielectric. The excess silicon in the film also provides desirable etching and annealing characteristics.
(FR) On dépose des films de disiliciure de tungstène (WSIx) sur du polysilicium dopé ou non dopé en réduisant le composé WF6 au moyen d'un mélange de dichlorosilane (SiH2Cl2) et disilane (Si2H6). L'addition de disilane permet d'obtenir un mécanisme augmentant la résistivité (rapport silicium/tungstène) du film (fig. 1) sans produire d'effets négatifs sur l'uniformité (fig. 2) ou la vitesse de déposition du film (fig. 3). Un rapport silicium/tungstène élevé empêche la dégradation du film de siliciure et du film de polysilicium sous-jacent pendant la croissance ultérieure d'un diélectrique d'oxyde (SiO2). Le silicium excédentaire contenu dans le film permet également d'obtenir des caractéristiques d'attaque et de recuit souhaitables.
Designated States: DE, JP, KR, NL
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1019920702794