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1. (WO1991017543) THREE-DIMENSIONAL MEMORY CARD STRUCTURE WITH INTERNAL DIRECT CHIP ATTACHMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017543 International Application No.: PCT/US1990/005795
Publication Date: 14.11.1991 International Filing Date: 10.10.1990
Chapter 2 Demand Filed: 25.11.1991
IPC:
G11C 5/00 (2006.01) ,G11C 5/06 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
5
Details of stores covered by group G11C11/63
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
5
Details of stores covered by group G11C11/63
06
Arrangements for interconnecting storage elements electrically, e.g. by wiring
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; Armonk, NY 10504, US
Inventors:
KRYZANIWSKY, Bohdan, Roman; US
Agent:
MELLER, Michael, N.; Meller & Associates P.O. Box 2198 Grand Central Station New York, NY 10163, US
Priority Data:
516,50430.04.1990US
Title (EN) THREE-DIMENSIONAL MEMORY CARD STRUCTURE WITH INTERNAL DIRECT CHIP ATTACHMENT
(FR) CARTE MEMOIRE TRIDIMENSIONNELLE AVEC UNE STRUCTURE DE CONNEXION DE PUCE INTERNE DIRECTE
Abstract:
(EN) A memory card structure is disclosed containing an embedded three dimensional array of semiconductor memory chips. The card structure includes at least one memory core and at least one power core which are joined together in an overlapping relationship. Each memory core comprises a copper-invar-copper thermal conductor plane having a two dimensional array of chip well locations on each side of the plane. Polytetrafluoroethylene covers the major surfaces of the thermal conductor plane except at the bottoms of the chip wells. Memory chips are placed in the chip wells and are covered by insulating and wiring levels. Each power core comprises at least one copper-invar-copper electrical conductor plane and polytetrafluoroethylene covering the major surfaces of the electrical conductor plane. Provision is made for providing electrical connection pathways and cooling pathways along vertical as well as horizontal planes internal to the card structure.
(FR) Structure de carte mémoire contenant un réseau tridimensionnel noyé de puces mémoires de semi-conducteurs. La structure de la carte comporte au moins un tore mémoire et au moins un tore d'alimentation qui sont reliés par chevauchement. Chaque tore mémoire comprend un plan thermoconducteur cuivre-invar-cuivre ayant un réseau bidimensionnel d'emplacements de puits de puces de chaque côté du plan. Du polytétrafluoréthylène recouvre les plus grandes surfaces du plan thermoconducteur sauf en bas des puits de puces. Des puces mémoires sont placées dans les puits de puces et sont recouvertes de niveaux d'isolation et de câblage. Chaque tore d'alimentation comprend au moins un plan électroconducteur ciuvre-invar-cuivre et du polytétrafluoréthylène recouvrant les plus grandes surfaces du plan électroconducteur. Il est possible d'ajouter des voies d'accès de connexion électrique et des voies d'accès de refroidissement le long des plans internes tant horizontaux que verticaux de la structure de la carte.
Designated States: JP
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0528792US5227338