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1. (WO1991017289) SILICON SINGLE CRYSTAL MANUFACTURING APPARATUS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017289 International Application No.: PCT/JP1991/000547
Publication Date: 14.11.1991 International Filing Date: 24.04.1991
IPC:
C30B 15/12 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
10
Crucibles or containers for supporting the melt
12
Double crucible methods
Applicants:
NKK CORPORATION [JP/JP]; 1-2, Marunouchi 1-chome Chiyoda-ku Tokyo 100, JP (AllExceptUS)
KANETO, Takeshi [JP/JP]; JP (UsOnly)
SHIMA, Yoshinobu [JP/JP]; JP (UsOnly)
Inventors:
KANETO, Takeshi; JP
SHIMA, Yoshinobu; JP
Agent:
KIMURA, Saburo ; The 6th Central Bldg. 6F 19-10, Toranomon 1-chome Minato-ku Tokyo 105, JP
Priority Data:
2/11451927.04.1990JP
Title (EN) SILICON SINGLE CRYSTAL MANUFACTURING APPARATUS
(FR) APPAREIL DE FABRICATION DE MONOCRISTAUX DE SILICIUM
Abstract:
(EN) A silicon single crystal manufacturing apparatus for pulling at a high rate a silicon single crystal having a large diameter and stable composition according to the CZ method of the type in which a crucible is rotated. A crucible-type partition member is closely fitted to a bottom portion of the crucible, and the radius of curvature of a portion connecting a side and bottom of the crucible-type partition member is between 10mm and 50mm. Thus, a convection of molten silicon in a crystal growing section of the crucible is maintained in a condition suited for pulling at a high rate a silicon single crystal which is large in diameter and stable in composition.
(FR) L'invention se rapporte à un appareil de fabrication de monocristaux de silicium, qui sert à produire par tirage à une vitesse élevée un monocristal de silicium ayant un grand diamètre et une composition stable en employant la technique CZ du type utilisant un creuset mis en rotation. Un élément de cloison de type creuset est adapté étroitement sur une partie de fond du creuset, et le rayon de courbure d'une partie reliant un côté et le fond de l'élément de cloison de type creuset est compris entre 10mm et 50mm. Ainsi, une convection du silicium en fusion dans une section de croissance cristalline du creuset est maintenue dans un état approprié pour permettre la production par tirage à une vitesse élevée d'un monocristal de silicium qui est de grand diamètre et de composition stable.
Designated States: DE, KR, US
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1019920702733