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1. (WO1991017285) MICROWAVE PLASMA ASSISTED GAS JET DEPOSITION OF THIN FILM MATERIALS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/017285 International Application No.: PCT/US1991/003140
Publication Date: 14.11.1991 International Filing Date: 07.05.1991
Chapter 2 Demand Filed: 08.11.1991
IPC:
C23C 16/452 (2006.01) ,C23C 16/511 (2006.01) ,C23C 16/513 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
448
characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
452
by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
511
using microwave discharges
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
513
using plasma jets
Applicants:
SCHMITT TECHNOLOGY ASSOCIATES [US/US]; 25 Science Park New Haven, CT 06511, US
Inventors:
SCHIMITT, Jerome, J.; US
HALPERN, Bret, L.; US
Agent:
GROGAN, J., Kevin; McCormick, Paulding & Huber City Place II 185 Asylum Street Hartford, CT 06103-4102, US
Priority Data:
521,10009.05.1990US
Title (EN) MICROWAVE PLASMA ASSISTED GAS JET DEPOSITION OF THIN FILM MATERIALS
(FR) DEPOT DE MATERIAUX EN COUCHE MINCE PAR JETS DE GAZ ASSOCIES A UN PLASMA A ONDES ULTRACOURTES
Abstract:
(EN) A novel method and apparatus of fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.
(FR) Cette invention concerne un nouveau procécé et un appareil servant à frabriquer des matériaux à couche mince à l'aide de la dynamique des gaz à grande vitesse, ledit procédé se fondant sur des jets libres supersoniques d'un gaz porteur qui transporte des espèces de vapeur de dépôt, produites dans une décharge à ondes ultracourtes, sur la surface d'un substrat préparé sur lequel la vapeur se dépose pour former une couche mince. Avec cette invention, on obtient des vitesses de dépôt élevées, et des couches minces d'une qualité inattendue à de faibles températures.
Designated States: CA, JP, KR
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CA2082432