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1. (WO1991009426) SCR STRUCTURE FOR FAST TURN-ON SWITCHING
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/009426 International Application No.: PCT/US1990/007354
Publication Date: 27.06.1991 International Filing Date: 17.12.1990
Chapter 2 Demand Filed: 15.07.1991
IPC:
H01L 29/74 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
74
Thyristor-type devices, e.g. having four-zone regenerative action
Applicants:
HARRIS CORPORATION [US/US]; P.O. Box 883 Melbourne, FL 32902-0883, US
Inventors:
PRENTICE, John, S.; US
Agent:
PALAN, Perry; Barnes & Thornburg 1815 H Street, N.W. Suite 800 Washington, DC 20006, US
Priority Data:
451,24915.12.1989US
Title (EN) SCR STRUCTURE FOR FAST TURN-ON SWITCHING
(FR) STRUCTURE DE REDRESSEUR COMMANDE AU SILICIUM (SCR) POUR OUVERTURE RAPIDE
Abstract:
(EN) A latching switch having a vertical and lateral PNP connected in parallel with each other and having their bases connected to the collectors of parallel connected vertical and lateral NPN transistors and having their collectors connected to the bases of the NPN transistors. The PNP emitters (24V, 24L) form the anode, the PNP bases (26V, 26L, 10) form the anode gate, the NPN bases (20V, 20L, 30) form the cathode gate and the NPN emitters (18V, 18L) form the cathode of the latching switch. The integration in a planar process is achieved by having N and P wells (10, 30) contiguous at a first boundary (40) and providing the appropriate base (20, 26) and emitter (18, 24) regions in the appropriate well (10, 30) to produce the interconnected vertical NPN and PNP transitors. Some embodiments minimize and virtually eliminate the lateral transistors while maintaining integrated connection.
(FR) Un commutateur à verrouillage est caractérisé par un PNP vertical et latéral mutuellement reliés en parallèle, et ayant leurs bases raccordées aux collecteurs de transistors NPN verticaux et latéraux reliés en parallèle et ayant leurs collecteurs reliés aux bases des transistors NPN. Les émetteurs PNP (24V, 24L) constituent l'anode, les base PNP (26V, 26L, 10) forment la gâchette de l'anode, les bases NPN (20V, 20L, 30) forment la gâchette de la cathode, et les émetteurs NPN (18V, 18L) forment la cathode du commutateur à verrouillage. L'intégration dans un procédé planaire est réalisée en disposant des puits N et P (10, 30) de manièrte contiguë à une première limite (40) et en disposant les régions appropriées de base (20, 26) et d'émetteur (18, 24) dans le puits approprié (10, 30) pour créer les transistors NPN et PNP verticaux interconnectés. Certaines réalisations minimisent et pratiquement suppriment les transistors latéraux tout en maintenant une connexion intégrée.
Designated States: JP, KR
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0505456KR1019920704359