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1. (WO1991009425) METHOD OF MANUFACTURING A SOLID-STATE DEVICE AND SOLID-STATE DEVICE, PARTICULARLY SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/009425 International Application No.: PCT/HU1989/000061
Publication Date: 27.06.1991 International Filing Date: 07.12.1989
IPC:
H01L 21/26 (2006.01) ,H01L 29/16 (2006.01) ,H01L 29/45 (2006.01) ,H01L 29/47 (2006.01) ,H01L 29/51 (2006.01) ,H01S 5/30 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
16
including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
45
Ohmic electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
47
Schottky barrier electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
51
Insulating materials associated therewith
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
Applicants:
TELEKI, Péter [HU/HU]; HU
Inventors:
TELEKI, Péter; HU
Agent:
DANUBIA; P.O. Box 198 H-1368 Budapest, HU
Priority Data:
Title (EN) METHOD OF MANUFACTURING A SOLID-STATE DEVICE AND SOLID-STATE DEVICE, PARTICULARLY SEMICONDUCTOR DEVICE
(FR) PROCEDE DE FABRICATION D'UN DISPOSITIF MONOLITHIQUE, ET DISPOSITIF MONOLITHIQUE, NOTAMMENT UN DISPOSITIF SEMI-CONDUCTEUR
Abstract:
(EN) In a method of manufacturing a solid-state, particularly a semiconductor device, comprising the steps of treating a surface of a carrier body, covering the treated surface with an active layer system including at least one thin layer, the active layer system determining an outer surface of the device, then depositing a covering thin layer on the outer surface, at least partly at least one of the thin layers is doped or connected with an isotope having decay product influencing at least one predetermined physicaly property of a selected thin layer, the isotope being present in an amount causing modification of the predetermined physical property after a predetermined period. The proposed solid-state device, comprising a carrier body, a thin layer system including at least one thin layer determining an outer surface of the device and a covering layer for protecting the outer surface, is completed or made with an inner part or at least one thin layer including at one or more radioactive doping component for influencing at least one characteristic physical property of the active layer system.
(FR) Un procédé de fabrication d'un dispositif monolithique, notamment un dispositif semi-conducteur, consiste à traiter la surface d'un corps porteur, à recouvrir la surface traitée avec un système de couches actives comprenant au moins une couche mince, ce système déterminant une surface externe du dispositif, puis à déposer sur la surface externe une couche mince. Au moins une partie d'au moins une des couches minces est dopée ou reliée à un isotope possédant un produit de désintégration ayant une influence sur au moins une mécanique prédéterminée d'une couche mince sélectionnée, l'isotope étant présent en quantité suffisante pour provoquer une modification de la propriété mécanique prédéterminée après une période prédéterminée. Le dispositif monolithique proposé, comprenant un corps porteur, un système de couches minces présentant au moins une couche mince déterminant une surface externe du dispositif, et une couche de recouvrement destinée à protéger la surface externe, s'achève ou se fabrique avec un élément interne ou au moins une couche mince comprenant un ou plusieurs éléments de dopage radioactifs afin d'avoir une influence sur au moins une propriété mécanique caractéristique du système de couches actives.
Designated States: AU, JP, SU, US
European Patent Office (AT, BE, CH, DE, ES, FR, GB, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
AU1989046484