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1. (WO1991009422) METHOD OF MAKING CRACK-FREE INSULATING FILMS WITH SOG INTERLAYER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/009422 International Application No.: PCT/CA1990/000448
Publication Date: 27.06.1991 International Filing Date: 19.12.1990
Chapter 2 Demand Filed: 19.07.1991
IPC:
G02B 6/02 (2006.01) ,H01L 21/768 (2006.01) ,H01L 23/532 (2006.01)
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
02
Optical fibre with cladding
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532
characterised by the materials
Applicants:
MITEL CORPORATION [CA/CA]; 350 Legget Drive Kanata, Ontario K2K 1X3, CA (AllExceptUS)
OUELLET, Luc [CA/CA]; CA (UsOnly)
AZELMAD, Abdellah [CA/CA]; CA (UsOnly)
Inventors:
OUELLET, Luc; CA
AZELMAD, Abdellah; CA
Agent:
MITCHELL, Richard, J.; 50 O'Connor Street, Third Floor P.O. Box 957, Station B Ottawa, Ontario K1P 5S7, CA
Priority Data:
2,006,17420.12.1989CA
Title (EN) METHOD OF MAKING CRACK-FREE INSULATING FILMS WITH SOG INTERLAYER
(FR) PROCEDE DE FABRICATION DE FILMS ISOLANTS SANS CRAQUELURES AVEC COUCHE INTERMEDIAIRE EN VERRE SOG
Abstract:
(EN) A method of fabricating a semiconductor device is disclosed characterized in that a first dielectric layer is applied over an interconnect layer having tracks defining a conductive pattern, the first dielectric layer forming valleys between the tracks of the interconnect layer, spin-on glass is applied over said first layer to planarize it by forming spin-on glass zones in the valleys defined by the first dielectric layer, and a second layer is applied to the planarized first layer, whereby the first and second layers and said spin-on glass zones form a composite multi-layer film. The first layer is formed such that it has compressive stress at room temperature to prevent cracking in the composite multi-layer film during subsequent heat treatment. The second layer can be another dielectric layer or a further interconnect layer applied directly to the first layer and SOG planarization layer. The method can also be applied to other fields, such as the manufacture of optical fibers, emission diodes and the like.
(FR) Le procédé décrit, qui sert à la fabrication de dispositifs à semi-conducteurs, consiste à appliquer une première couche diélectrique sur une couche d'interconnexion comportant des sillons définissant une structure conductrice, la première couche diélectrique formant des vallées entre les sillons de la couche d'interconnexion, à appliquer du verre de dépôt par rotation (verre SOG) sur cette première couche pour la rendre plane par la formation de zones en verre SOG dans les vallées définies par la première couche diélectrique, et à appliquer une seconde couche sur la première couche rendue plane, de façon à ce que les première et seconde couches et les zones en verre SOG forment un film multicouche composite. La première couche est conçue de façon à exercer des contraintes de compression à la température ambiante, de façon à empêcher toute apparition de craquelures dans le film multicouche composite lors d'un traitement thermique ultérieur. La seconde couche peut être constituée par une autre couche diélectrique ou par une autre couche d'interconnexion appliquée directement sur la première couche et sur la couche d'aplanissement en verre SOG. Ce procédé peut également s'appliquer dans d'autres domaines, tels que la fabrication de fibres optiques, de diodes électroluminescentes et similaires.
Designated States: GB, JP, KR, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)