Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO1991009421) PACKAGED DIODE FOR HIGH TEMPERATURE OPERATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/009421 International Application No.: PCT/US1990/007176
Publication Date: 27.06.1991 International Filing Date: 06.12.1990
IPC:
H01L 23/051 (2006.01) ,H01L 23/492 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
02
Containers; Seals
04
characterised by the shape
043
the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
051
another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488
consisting of soldered or bonded constructions
492
Bases or plates
Applicants:
GENERAL INSTRUMENT CORPORATION [US/US]; 767 Fifth Avenue New York, NY 10153, US
CREE RESEARCH, INC. [US/US]; 2810 Meridian Parkway, Suite 176 Durham, NC 27713, US
Inventors:
EDMOND, John, A.; US
WALTZ, Douglas, G.; US
MITCHELL, Muni, M.; US
SEDIGH, Mohammad; US
HAMERSKI, Roman; US
Agent:
SUMMA, Philip ; Bell, Seltzer, Park & Gibson P.O. Drawer 34009 Charlotte, NC 28234, US
Priority Data:
447,21307.12.1989US
Title (EN) PACKAGED DIODE FOR HIGH TEMPERATURE OPERATION
(FR) DIODE ENCAPSULEE POUR APPLICATIONS A HAUTE TEMPERATURE
Abstract:
(EN) The invention is a packaged diode (10) suitable for operation at temperatures above 200 °C and during temperature excursions between -65 °C and at least 350 °C. The invention comprises a diode (13) having respective p-n portions (20, 21) with a p-n junction (22) therebetween, and formed of a semiconductor material that is stable and will exhibit satisfactory diode characteristics at such temperatures. Ohmic contacts (23, 24) are made to the opposite sides of the junction diode and to the respective p and n portions of the diode. An electrode (11, 12) adjacent each of the ohmic contacts is formed of an electrically conductive material that has a coefficient of thermal expansion similar to the coefficient of thermal expansion of the semiconductor material for providing structural support to the junction diode and electrical contact therewith. A lead (15, 16) contacts each of the electrodes opposite each electrode's contact with the diode. Each lead is formed of an electrically conductive material and is joined to the respective electrode by an alloy that likewise remains physically and electrically stable at temperatures greater than 200 °C and during repetitive operating cycles over temperature excursions between about -65 °C and 350 °C. A packaging material (14) surrounds the junction diode and portions of the electrode to hermetically seal it.
(FR) Une diode encapsulée (10) peut être utilisée à des températures supérieures à 200 °C et pendant des excursions thermiques allant de -65 °C jusqu'à au moins 350 °C. Une diode (13) ayant des parties p-n respectives (20, 21) reliées par une jonction p-n (22) intermédiaire est composée d'un matériau semiconducteur stable et a des caractéristiques satisfaisantes à ces températures. Des connexions conductrices (23, 24) sont reliées aux côtés opposés de la diode de jonction et aux parties p et n respectives de la diode. Une électrode (11, 12) adjacente à chaque connexion conductrice est composée d'un matériau électroconducteur ayant un coefficient de dilatation thermique similaire au coefficient de dilatation thermique du matériau semiconducteur, afin d'assurer un support structural à la diode de jonction et au contact électrique avec celle-ci. Un conducteur (15, 16) contacte chaque électrode du côté opposé au contact de l'électrode avec la diode. Chaque conducteur est formé d'un matériau électroconducteur et est relié à l'électrode respective par un alliage qui reste lui aussi physiquement et électriquement stable à des températures supérieures à 200 °C et pendant des cycles répétitifs d'exploitation lors d'excursions thermiques allant de -65 °C jusqu'à 350 °C environ. Un matériau d'encapsulage (14) entoure la diode de jonction et des parties de l'électrode de manière à les renfermer hermétiquement.
Designated States: JP
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)