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1. (WO1991009420) METHOD OF MAKING SILICON QUANTUM WIRES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/009420 International Application No.: PCT/GB1990/001901
Publication Date: 27.06.1991 International Filing Date: 06.12.1990
Chapter 2 Demand Filed: 24.06.1991
IPC:
H01L 21/306 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND [GB/GB]; Whitehall London SW6 1TR, GB (AllExceptUS)
CANHAM, Leigh-Trevor [GB/GB]; GB (UsOnly)
KEEN, John, Michael [GB/GB]; GB (UsOnly)
LEONG, Weng, Yee [GB/GB]; GB (UsOnly)
Inventors:
CANHAM, Leigh-Trevor; GB
KEEN, John, Michael; GB
LEONG, Weng, Yee; GB
Agent:
BECKHAM, Robert, William; Ministry of Defence Patents 1A Room 2014, Empress State Building Lillie Road London SW6 1TR, GB
Priority Data:
8927709.907.12.1989GB
Title (EN) METHOD OF MAKING SILICON QUANTUM WIRES
(FR) PROCEDE DE FABRICATION DE FILS QUANTIQUES AU SILICIUM
Abstract:
(EN) A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in 20 % aqueous hydrofluoric acid to produce a layer (5) microns thick with 70 % porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80 % or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6 - 2.0 eV) of the visible spectrum.
(FR) Selon un procédé de fabrication de fils semiconducteurs quantiques, on utilise une plaquette semiconductrice (14) comme matériau de départ. La plaquette (14) est une plaquette de type p faiblement dopée qui contient une couche p peu profonde fortement dopée afin d'assurer l'uniformité du flux de courant. La plaquette (14) est anodisée dans 20 % d'acide hydrofluorique aqueux afin de produire une couche de 5 microns d'épaisseur ayant une porosité égale à 70 % et une bonne cristallinité. La couche est gravée par la suite dans de l'acide hydrofluorique concentré, qui permet d'obtenir une gravure lente. La gravure augmente la porosité jusqu'à un niveau de l'ordre de 80 % ou davantage. A ce niveau, les pores se chevauchent et on s'attend à voir des fils quantiques se former ayant des diamètres inférieurs ou égaux à 3 nm. La couche gravée présente une émission photoluminescente à des énergies photoniques bien supérieures à la largeur de bande interdite du silicium (1,1 eV), s'étendant dans la zone rouge (1,6 - 2,0 eV) du spectre visible.
Designated States: CA, GB, JP, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
ES2074586EP0504170EP0616378US5358600US5348618US5627382
US6147359US6369405JPH05502978JP7074392 CA2073030DE000069020906
GB2254188GB2266994DK0504170