Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO1991009161) PROCESS FOR FORMING EPITAXIAL FILM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/009161 International Application No.: PCT/JP1990/001633
Publication Date: 27.06.1991 International Filing Date: 14.12.1990
IPC:
C23C 14/34 (2006.01) ,C23C 14/35 (2006.01) ,C23C 14/56 (2006.01) ,C30B 23/02 (2006.01) ,C30B 23/08 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
35
by application of a magnetic field, e.g. magnetron sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
56
Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23
Single-crystal growth by condensing evaporated or sublimed materials
02
Epitaxial-layer growth
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23
Single-crystal growth by condensing evaporated or sublimed materials
02
Epitaxial-layer growth
08
by condensing ionised vapours
Applicants:
CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome Ohta-ku Tokyo 146, JP (AllExceptUS)
ICHIKAWA, Takeshi [JP/JP]; JP (UsOnly)
MIZUTANI, Hidemasa [JP/JP]; JP (UsOnly)
Inventors:
ICHIKAWA, Takeshi; JP
MIZUTANI, Hidemasa; JP
Agent:
OGIUE, Toyonori; 3F Tamayanagi Building 3-1, Rokubancho Chiyoda-ku Tokyo 102, JP
Priority Data:
1/32544215.12.1989JP
Title (EN) PROCESS FOR FORMING EPITAXIAL FILM
(FR) PROCEDE DE FORMATION DE PELLICULES EPITAXIALES
Abstract:
(EN) A process for forming an epitaxial film by applying a bias and a high-frequency electric power for plasma generation to a target and forming a film on a biased substrate by the sputtering of the target, wherein the substrate is kept in the temperature range of 400 to 700 °C in an atmosphere where the partial pressure of each of H2O, CO and CO2 is 1.0 x 10-8 Torr in the film forming step. The obtained epitaxial film has excellent interfacial properties, an extremely reduced impurity content, a good crystallinity and an excellent step coverage, so that it can be suitably applied to semiconductor devices.
(FR) Un procédé permet de former une pellicule épitaxiale par application sur une cible d'une tension de polarisation et d'une énergie électrique de haute fréquence, à des fins de génération de plasma, et par formation d'une pellicule sur le substrat polarisé par pulvérisation sur la cible. Selon le procédé, on maintient le substrat à une température comprise entre 400 et 700 °C dans une atmosphère où la pression partielle d'H2O, de CO de CO2 est égale à 1,0 x 10-8 Torr pendant l'étape de formation de la pellicule. La pellicule épitaxiale ainsi obtenue a d'excellentes propriétés d'interface, une teneur en impuretés extrêmement réduite, une bonne cristallinité et une excellente capacité de couverture de dénivellations, de sorte que l'on peut l'appliquer de manière avantageuse sur des dispositifs semiconducteurs.
Designated States: US
European Patent Office (DE, FR, GB, IT, NL)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP0458991US5849163