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1. (WO1991009148) DEVICE FOR VACUUM TREATMENT AND DEVICE FOR AND METHOD OF FILM FORMATION USING SAID DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/009148 International Application No.: PCT/JP1990/001601
Publication Date: 27.06.1991 International Filing Date: 10.12.1990
IPC:
C23C 14/50 (2006.01) ,C23C 14/54 (2006.01) ,C23C 14/56 (2006.01) ,C23C 16/458 (2006.01) ,C23C 16/46 (2006.01) ,H01L 21/00 (2006.01) ,H01L 21/683 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
50
Substrate holders
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
54
Controlling or regulating the coating process
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
56
Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
458
characterised by the method used for supporting substrates in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
46
characterised by the method used for heating the substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
HITACHI, LTD. [JP/JP]; 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo 101, JP (AllExceptUS)
OKAMOTO, Akira [JP/JP]; JP (UsOnly)
KOBAYASHI, Shigeru [JP/JP]; JP (UsOnly)
SHIMAMURA, Hideaki [JP/JP]; JP (UsOnly)
TSUZUKU, Susumu [JP/JP]; JP (UsOnly)
NISHITANI, Eisuke [JP/JP]; JP (UsOnly)
KISHIMOTO, Satoshi [JP/JP]; JP (UsOnly)
YONEOKA, Yuji [JP/JP]; JP (UsOnly)
Inventors:
OKAMOTO, Akira; JP
KOBAYASHI, Shigeru; JP
SHIMAMURA, Hideaki; JP
TSUZUKU, Susumu; JP
NISHITANI, Eisuke; JP
KISHIMOTO, Satoshi; JP
YONEOKA, Yuji; JP
Agent:
ASAMURA, Kiyoshi ; Room 331, New Ohtemachi Building 2-1, Ohtemachi 2-chome Chiyoda-ku Tokyo 100, JP
Priority Data:
1/31874911.12.1989JP
2/22538829.08.1990JP
Title (EN) DEVICE FOR VACUUM TREATMENT AND DEVICE FOR AND METHOD OF FILM FORMATION USING SAID DEVICE
(FR) APPAREIL DE TRAITEMENT SOUS VIDE ET PROCEDE DE FORMATION DE PELLICULES UTILISANT LEDIT APPAREIL
Abstract:
(EN) A vacuum treatment device for conducting various treatments of wafers in a vacuum tank and a method of film formation using said device, which is characterized in that temperature control of the wafers during film formation is performed using a radiation thermometer and, in particular, wafers are conveyed to each stage in a vacuum film forming chamber after emissivities thereof are corrected by a temperature correction stage in combination with the shutter, and are temperature-controlled to a fixed temperature to form a film thereon.
(FR) Appareil de traitement sous vide permettant de soumettre à différents traitements des tranches de silicium dans un réservoir sous vide, et procédé de formation de pellicules utilisant ce dispositif, caractérisé par le fait que l'on règle la température des tranches pendant la formation de la pellicule en utilisant un thermomètre à radiation, les tranches étant notamment transportées vers chaque étage dans une chambre de formation de pellicule sous vide, après correction de leurs émittances par un étage de correction de température combiné avec le volet, et leur température est régulée à une valeur définie afin de former une pellicule en surface.
Designated States: DE, KR, US
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US6171641KR1019920701511