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1. (WO1991007780) SEMICONDUCTOR SWITCH
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/007780 International Application No.: PCT/SE1990/000678
Publication Date: 30.05.1991 International Filing Date: 19.10.1990
Chapter 2 Demand Filed: 16.04.1991
IPC:
H01L 27/06 (2006.01) ,H01L 27/092 (2006.01) ,H01L 29/49 (2006.01) ,H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
088
the components being field-effect transistors with insulated gate
092
complementary MIS field-effect transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
ASEA BROWN BOVERI AB [SE/SE]; S-721 83 Västerås, SE (AllExceptUS)
SVEDBERG, Per [SE/SE]; SE (UsOnly)
Inventors:
SVEDBERG, Per; SE
Agent:
LUNDBLAD VANNESJÖ, Katarina ; ABB Corporate Research Patent Department S-721 78 Västerås, SE
Priority Data:
8903761-809.11.1989SE
Title (EN) SEMICONDUCTOR SWITCH
(FR) COMMUTATEUR A SEMI-CONDUCTEURS
Abstract:
(EN) A semiconductor device, preferably for switching purposes, has a first field effect transistor (31, 32, 33) of enhancement type provided on a substrate (1). The transistor is separated from the substrate by an electrically insulating layer (2). On the transistor an insulating layer (4) is arranged and on this layer a second field effect transistor (51, 52, 53) is provided. The transistors are arranged such that their channel regions (32, 52) cover each other. The source regions (31, 51) and drain regions (33, 53) of the transistors have contacts (311, 511; 331, 531) for connection of control voltages between the source regions mutually and between the drain regions mutually. The transistors are of enhancement type. One of the transistors is of N-type (N-conducting type) and the other transistor is of P-type (P-conducting type). By applying control voltages between the two source contacts mutually and the two drain contacts mutually and of such polarity that the transistor of P-type becomes positive in relation to the transistor of N-type, conducting channels are produced in the confronting surfaces of the channel regions, and the transistors change into conducting state. Further, the component has connections (312, 332) for connection of a load circuit.
(FR) Le dispositif à semi-conducteurs décrit, qui est de préférence conçu pour des opérations de commutation, comprend un premier transistor à effet de champ (31, 32, 33) du type à enrichissement placé sur un substrat (1). Le transistor est séparé du substrat par une couche électro-isolante (2). Une couche isolante (4) est disposée sur le transistor et un second transistor à effet de champ (51, 52, 53) est placé sur cette couche. Les transistors sont disposés de façon à ce que leurs régions canal (32, 52) se couvrent les unes les autres. Les régions source (31, 51) et les régions drain (33, 53) des transistors comportent des contacts (311, 511; 331, 531) permettant la connexion des tensions de commande entre les régions source mutuellement et entre les régions drain mutuellement. Les transistors sont du type à enrichissement. L'un des transistors est à conduction de type M et l'autre transistor est à conduction de type P. En appliquant les tensions de commande entre les deux contacts source mutuellement et les deux contacts drain mutuellement et avec une polarité telle que le transistor de type P devient positif par rapport au transistor de type M, on obtient des canaux conducteurs dans les surfaces opposées des régions canal, et les transistors passent à l'état conducteur. Les composants de la présente invention comportent en outre des connexions (312, 332) permettant la connexion d'un circuit de charge.
Designated States: CA, JP, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0540516JPH05501479CA2069911