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1. (WO1991007688) SEMI-CONDUCTOR STRUCTURES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/007688 International Application No.: PCT/GB1990/001759
Publication Date: 30.05.1991 International Filing Date: 15.11.1990
Chapter 2 Demand Filed: 19.04.1991
IPC:
G02F 1/017 (2006.01) ,G02F 1/21 (2006.01) ,H01L 31/0352 (2006.01) ,H01L 31/18 (2006.01)
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
015
based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017
Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
21
by interference
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0352
characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY [GB/GB]; 81 Newgate Street London EC1A 7AJ, GB (AllExceptUS)
REJMAN-GREENE, Marek, Andrzej, Zbigniew [GB/GB]; GB (UsOnly)
SCOTT, Edward, Geoffrey [GB/GB]; GB (UsOnly)
Inventors:
REJMAN-GREENE, Marek, Andrzej, Zbigniew; GB
SCOTT, Edward, Geoffrey; GB
Agent:
MISELBACH, Roger, George; Intellectual Property Unit British Telecom 151 Gower Street London WC1E 6BA, GB
Priority Data:
8926183.820.11.1989GB
Title (EN) SEMI-CONDUCTOR STRUCTURES
(FR) STRUCTURES DE SEMI-CONDUCTEURS
Abstract:
(EN) An opto-electronic component comprises a substrate of InP (4, 5) with stacks of quantum wells (6) grown on both surfaces of the substrate. Layers (7) of n doped InP having p-doped regions (8) are formed on the outer surface of the quantum well structures. In use, voltages V1 and V2 may be applied to electrodes (1) enabling the component to be used for a number of applications, e.g. as a detector/modulator pair, in close coupled arrays of modulators, etc.
(FR) Composant opto-électronique comprenant un substrat de InP (4, 5) avec des tas de puits quantiques (6) formés sur les deux surfaces du substrat. Des couches (7) de InP dopées n ayant des régions dopées p (8) sont formées sur la surface extérieure des puits quantiques. A l'utilisation, les tensions V1 et V2 peuvent être appliqués aux électrodes (1), permettant l'utilisation dudit composant dans un certain nombre d'applications, par ex. comme paire détecteur/modulateur, dans les réseaux à couplage ferme de modulateurs, etc.
Designated States: CA, JP, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0502044CA2068991