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1. (WO1991007446) ANIONICALLY POLYMERIZABLE MONOMERS, POLYMERS THEREOF, AND USE OF SUCH POLYMERS IN PHOTORESISTS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/007446 International Application No.: PCT/US1990/006832
Publication Date: 30.05.1991 International Filing Date: 20.11.1990
Chapter 2 Demand Filed: 21.06.1991
IPC:
C07F 7/08 (2006.01) ,C07F 7/18 (2006.01) ,C07F 7/28 (2006.01) ,C08F 30/04 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/075 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
02
Silicon compounds
08
Compounds having one or more C-Si linkages
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
02
Silicon compounds
08
Compounds having one or more C-Si linkages
18
Compounds having one or more C-Si linkages as well as one or more C-O-Si linkages
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
28
Titanium compounds
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
30
Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
04
containing a metal
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
075
Silicon-containing compounds
Applicants:
LOCTITE CORPORATION [US/US]; 705 North Mountain Road Newington, CT 06111, US
Inventors:
WOODS, John, G.; US
COAKLEY, Pauline; IE
Agent:
WELCH, Edward, K., II; Loctite Corporation 10 Columbus Boulevard Hartford, CT 06106, US
Priority Data:
3713/8921.11.1989IE
542,46422.06.1990US
Title (EN) ANIONICALLY POLYMERIZABLE MONOMERS, POLYMERS THEREOF, AND USE OF SUCH POLYMERS IN PHOTORESISTS
(FR) MONOMERES A POLARISATION ANIONIQUE, LEURS POLYMERES ET EMPLOI DESDITS POLYMERES DANS DES AGENTS DE RESERVE
Abstract:
(EN) Anionically polymerizable monomers containing at least one silicon or titanium atom for polymeric photoresists for use in microlithography. The monomers are of formula (I), wherein A is -H or -CH=CH2; X is a strong electron withdrawing group; Y is a strong electron withdrawing group containing at least one silicon or titanium atom. Preferably Y is (II), wherein n is 1-5 and R2, R3 and R4 are C1-C10 alkyl. A particularly preferred monomer is 3-trimethylsilylpropyl 2-cyanoacrylate. Methods for applying a resist coating by vapour deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed. The imaging layer may be applied over a planarizing layer to form a multilayer photoresist.
(FR) Des monomères à polymérisation anionique contenant au moins un atome de silicium ou de titane, forment des agents de réserve polymères utilisés en microlithographie. Les monomères sont de la formule (I) dans laquelle A représente -H ou -CH=CH2; X représente un groupe puissant d'élimination d'électrons; Y représente un groupe puissant d'élimination d'électrons, contenant au moins un atome de silicium ou de titane. Y représente de préférence la formule (II), dans laquelle n est compris entre 1 et 5, et R2, R3 et R4 représentent alkyle contenant 1 à 10 atomes de carbone. Un monomère particulièrement préféré est le 3-triméthylsilylpropyle 2-cyanoacrylate. Des procédés d'application d'un revêtement d'agent de réserve par dépôt en phase vapeur de ces monomères, et par exposition à un rayonnement, sont décrits. On peut produire une image de ton positif ou négatif, selon le procédé d'imagerie employé. La couche d'imagerie peut être appliquée sur une couche d'aplanissement afin de former un agent de réserve multicouche.
Designated States: JP
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0502128JPH05504366