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1. (WO1991006979) METHOD AND DEVICE FOR COMPENSATING DRIFT IN A SEMICONDUCTOR ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/006979 International Application No.: PCT/EP1990/001811
Publication Date: 16.05.1991 International Filing Date: 26.10.1990
IPC:
G05F 3/20 (2006.01) ,H01L 27/02 (2006.01)
G PHYSICS
05
CONTROLLING; REGULATING
F
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3
Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02
Regulating voltage or current
08
wherein the variable is dc
10
using uncontrolled devices with non-linear characteristics
16
being semiconductor devices
20
using diode-transistor combinations
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
Applicants:
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW [BE/BE]; Kapeldreef 75 B-3030 Leuven-Heverlee, BE (AllExceptUS)
COLINGE, Jean, Pierre [BE/BE]; BE (UsOnly)
Inventors:
COLINGE, Jean, Pierre; BE
Agent:
LAND, Addick, Adrianus, Gosling; Sweelinckplein 1 NL-2517 GK The Hague, NL
Priority Data:
890266226.10.1989NL
Title (EN) METHOD AND DEVICE FOR COMPENSATING DRIFT IN A SEMICONDUCTOR ELEMENT
(FR) PROCEDE ET DISPOSITIF DE COMPENSATION DE DERIVE DANS UN ELEMENT SEMI-CONDUCTEUR
Abstract:
(EN) A method and device for compensating drift wherein a feedback voltage is applied to a region of semiconductor material adjoining the insulating region.
(FR) Procédé et dispositif de compensation de dérivé dans lesquels une tension de réaction est appliquée à une zone d'un matériau semi-conducteur qui est contiguë à la zone isolante.
Designated States: JP, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0450027US5233236