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1. (WO1991006955) PASSAGE CHANNEL FOR CYLINDRICAL MAGNETIC DOMAINS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/006955 International Application No.: PCT/SU1989/000274
Publication Date: 16.05.1991 International Filing Date: 01.11.1989
IPC:
G11C 19/08 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
19
Digital stores in which the information is moved stepwise, e.g. shift registers
02
using magnetic elements
08
using thin films in plane structure
Applicants:
SPETSIALNOE KONSTRUKTORSKO-TEKHNOLOGICHESKOE BJURO DONETSKOGO FIZIKO-TEKHNICHESKOGO INSTITUTA AKADEMII NAUK UKRAINSKOI SSR [SU/SU]; ul. Rozy Luxembourg, 72 Donetsk, 340114, SU (AllExceptUS)
TEMERTI, Gennady Fedorovich [SU/SU]; SU (UsOnly)
SLUZHBIN, Jury Alexandrovich [SU/SU]; SU (UsOnly)
PODKORYTOV, Vladimir Nikolaevich [SU/SU]; SU (UsOnly)
Inventors:
TEMERTI, Gennady Fedorovich; SU
SLUZHBIN, Jury Alexandrovich; SU
PODKORYTOV, Vladimir Nikolaevich; SU
Agent:
THE USSR CHAMBER OF COMMERCE AND INDUSTRY; ul. Kuibysheva, 5/2 Moscow, 103735, SU
Priority Data:
Title (EN) PASSAGE CHANNEL FOR CYLINDRICAL MAGNETIC DOMAINS
(FR) CANAL DE PASSAGE POUR DOMAINES MAGNETIQUES CYLINDRIQUES
Abstract:
(EN) The invention relates to digital memorizing devices using magnetic memory elements. A passage channel for cylindrical magnetic domains comprises a single-axis magnetic layer (1) on which are located mutually insulated electrically conductive layers (2, 3, 4) with openings (7, 10, 13) located at intervals. The openings (10) in electrically conductive layers (3, 4) are offset in relation to the openings (7) in electrically conductive layer (2) by one half and one quarter of the interval between the openings respectively.
(FR) La présente invention porte sur des dispositifs de mémorisation numérique comportant des éléments de mémoire magnétiques. Un canal de passage pour les domaines magnétiques cylindriques consiste en une couche magnétique monoaxe (1) sur laquelle sont placées des couches (2, 3, 4) conductrices d'électricité, isolées les unes des autres, où sont pratiquées des ouvertures régulièrement espacées. Les ouvertures (10) des couches conductrices (3, 4) présentent par rapport aux ouvertures (7) de la couche conductrice (2) un décalage respectivement de la moitié et du quart de l'espacement desdites ouvertures.
Designated States: BR, DE, JP, KR, NL, US
Publication Language: Russian (RU)
Filing Language: Russian (RU)