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1. (WO1991006507) CORE WIRE CONNECTING BRIDGE FOR POLYCRYSTALLINE SILICON MANUFACTURING APPARATUSES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/006507 International Application No.: PCT/JP1990/001373
Publication Date: 16.05.1991 International Filing Date: 25.10.1990
Chapter 2 Demand Filed: 16.04.1991
IPC:
C01B 33/035 (2006.01) ,C23C 16/46 (2006.01) ,C30B 13/00 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
02
Silicon
021
Preparation
027
by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
035
by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
46
characterised by the method used for heating the substrate
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
13
Single-crystal growth by zone-melting; Refining by zone-melting
Applicants:
KOMATSU ELECTRONIC METALS CO., LTD. [JP/JP]; 2612, Shinomiya Hiratsuka-shi Kanagawa 254, JP (AllExceptUS)
OHTSUKI, Minoru [JP/JP]; JP (UsOnly)
MIYAMOTO, Yusuke [JP/JP]; JP (UsOnly)
NAGAI, Kenichi [JP/JP]; JP (UsOnly)
Inventors:
OHTSUKI, Minoru; JP
MIYAMOTO, Yusuke; JP
NAGAI, Kenichi; JP
Agent:
YAGITA, Shigeru ; Bussan Building Bekkan 1-15, Nishi Shimbashi 1-chome Minato-ku Tokyo 105, JP
Priority Data:
1/28604004.11.1989JP
Title (EN) CORE WIRE CONNECTING BRIDGE FOR POLYCRYSTALLINE SILICON MANUFACTURING APPARATUSES
(FR) PONT CONNECTEUR DE CONDUCTEURS CENTRAUX DESTINE AUX APPAREILS DE FABRICATION DE SILICIUM POLYCRISTALLIN
Abstract:
(EN) This invention is characterized in that a bridge for connecting filament-forming core wires in an apparatus for producing polycrystalline silicon by depositing the same on these filament-forming core wires, which are electrically heated, by the thermal decomposition of monosilane gas is formed out of tantalum, molybdenum, tungsten or zirconium. This connecting bridge may have an inverted pyramid type, tear droplet type or rectangular cross-sectional shape.
(FR) Pont, caractérisé en ce qu'il est formé de tantale, de molybdène, de tungstène ou de zirconium, servant à connecter les conducteurs centraux à formation de filaments dans un appareil de fabrication de silicium polycristallin par le dépôt de celui-ci sur lesdits conducteurs centraux, qui sont électriquement chauffés, à l'aide de la décomposition thermique du gaz monosilane. Ce pont connecteur peut être du type pyramide inversé, du type larme ou du type à section transversale rectangulaire.
Designated States: US
European Patent Office (DE, FR, GB, IT)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP0498887US5327454