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1. (WO1991006127) GRAPHOTAXIALLY FORMED PHOTOSENSITIVE DETECTOR ARRAY
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/006127 International Application No.: PCT/US1990/005748
Publication Date: 02.05.1991 International Filing Date: 09.10.1990
IPC:
H01L 21/20 (2006.01) ,H01L 21/36 (2006.01) ,H01L 27/144 (2006.01) ,H01L 31/0368 (2006.01) ,H01L 31/103 (2006.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
036
characterised by their crystalline structure or particular orientation of the crystalline planes
0368
including polycrystalline semiconductors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
103
the potential barrier being of the PN homojunction type
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
GRUMMAN AEROSPACE CORPORATION [US/US]; 1111 Stewart Avenue Mail Stop A25-111 Bethpage, NY 11714-3580, US
Inventors:
SOLOMON, Allen, L.; US
Agent:
BRUNDA, Bruce, B. ; Stetina & Brunda 24221 Calle de la Louisa, Ste. 401 Laguna Hills, CA 92653, US
Priority Data:
419,21110.10.1989US
Title (EN) GRAPHOTAXIALLY FORMED PHOTOSENSITIVE DETECTOR ARRAY
(FR) RESEAU DE DETECTEURS PHOTOSENSIBLES FORMES GRAPHOTAXIALEMENT
Abstract:
(EN) A polycrystalline or amorphous substrate (14) having a single crystalline layer (24) formed thereupon for making a photosensitive detector array and a method for forming the same are disclosed. The single crystalline layer is grown by graphotaxy, i.e. lateral epitaxy, upon the non-single crystalline substrate. A seed crystal (16) of the material which will comprise the layer to be grown is embedded in the substrate. Graphotaxial growth occurs from the seed crystal and travels across the surface of the substrate. Various methods of obtaining graphotaxial growth are disclosed.
(FR) L'invention concerne un substrat polycristallin ou amorphe (14) ayant une seule couche cristalline (24) formée sur le substrat pour produire un réseau de détecteurs photosensibles ainsi qu'un procédé de formation. La couche unique cristalline est développée par graphotaxie, c'est-à-dire épitaxie latérale, sur le substrat cristallin non unique. Un cristal d'ensemencement (16) du matériau comprenant la couche à développer est noyé dans le substrat. La croissance graphotaxiale se produit depuis le cristal d'ensemencement et progresse à travers la surface du substrat. Plusieurs procédés d'obtention d'une croissance graphotaxiale sont décrits.
Designated States: JP
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0448692