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1. (WO1991006125) SEMICONDUCTOR SENSOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1991/006125 International Application No.: PCT/FR1990/000736
Publication Date: 02.05.1991 International Filing Date: 15.10.1990
Chapter 2 Demand Filed: 26.03.1991
IPC:
G01L 9/00 (2006.01) ,H01L 27/20 (2006.01)
G PHYSICS
01
MEASURING; TESTING
L
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9
Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
20
including piezo-electric components; including electrostrictive components; including magnetostrictive components
Applicants:
SCHLUMBERGER INDUSTRIES [FR/FR]; 50, avenue Jean-Jaurès F-92120 Montrouge, FR (AllExceptUS)
MOSSER, Vincent [FR/FR]; FR (UsOnly)
SUSKI, Ian [FR/FR]; FR (UsOnly)
Inventors:
MOSSER, Vincent; FR
SUSKI, Ian; FR
Agent:
RITZENTHALER, Jacques ; Schlumberger Industries Centre de Recherche/SMR Boîte Postale 620-05 F-92542 Montrouge Cédex, FR
DUPONT, Henri; Schlumberger Industries Centre de Recherche/SMR Boîte Postale 620-05 F-92542 Montrouge Cédex, FR
Priority Data:
89/1338313.10.1989FR
Title (EN) SEMICONDUCTOR SENSOR
(FR) CAPTEUR A SEMI-CONDUCTEURS
Abstract:
(EN) The invention relates to field effect semiconductors sensors. The sensor according to the invention is comprised of a ring oscillator (3) consisting of an odd number of CMOS reversers and arranged in an area (2) which is sensitive to the physical magnitude to be measured. In order to increase the sensitivity of the sensor, for each CMOS reverser, the channel $i(n) of the NMOS transistor is arranged perpendicularly to the channel $i(p) of the PMOS transistor.
(FR) L'invention concerne les capteurs à semi-conducteurs à effet de champ. Le capteur selon l'invention comprend un oscillateur en anneau (3) formé à partir d'un nombre impair d'inverseurs CMOS et disposé dans une zone sensible (2) à la grandeur physique que l'on désire mesurer. Afin d'augmenter la sensibilité du capteur, on dispose pour chaque inverseur CMOS le canal $i(n) du transistor NMOS perpendiculairement au canal $i(p) du transistor PMOS.
Designated States: AU, BR, CA, HU, KR, NO, SU, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: French (FR)
Filing Language: French (FR)
Also published as:
NO19921453ES2065552EP0495899RU02075796US5281836CA2067180
DE000069015204KR1002009380000*AU1990066171FR2653271DK0495899