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1. WO1991000615 - METHOD FOR PRODUCING FIELD OXIDE FOR A SILICON-BASE INTEGRATED CIRCUIT

Publication Number WO/1991/000615
Publication Date 10.01.1991
International Application No. PCT/FR1990/000454
International Filing Date 21.06.1990
Chapter 2 Demand Filed 07.01.1991
IPC
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
H01L 21/314 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
H01L 21/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
32using masks
H01L 21/762 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
76Making of isolation regions between components
762Dielectric regions
CPC
H01L 21/02164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02164the material being a silicon oxide, e.g. SiO2
H01L 21/0217
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
0217the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
H01L 21/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
022the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
H01L 21/02247
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
02227formation by a process other than a deposition process
02247formation by nitridation, e.g. nitridation of the substrate
H01L 21/02255
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
02227formation by a process other than a deposition process
02255formation by thermal treatment
H01L 21/02271
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Applicants
  • SGS-THOMSON MICROELECTRONICS S.A. [FR/FR]; 7, avenue Galliéni F-94250 Gentilly Cédex, FR (AllExceptUS)
  • DELEONIBUS, Simon [FR/FR]; FR (UsOnly)
  • MARTIN, François [FR/FR]; FR (UsOnly)
  • MOLLE, Pascale [FR/FR]; FR (UsOnly)
Inventors
  • DELEONIBUS, Simon; FR
  • MARTIN, François; FR
  • MOLLE, Pascale; FR
Agents
  • BREVATOME; 25, rue de Ponthieu F-75008 Paris, FR
Priority Data
89/0839923.06.1989FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) METHOD FOR PRODUCING FIELD OXIDE FOR A SILICON-BASE INTEGRATED CIRCUIT
(FR) PROCEDE DE FABRICATION DE L'OXYDE DE CHAMP D'UN CIRCUIT INTEGRE SUR DU SILICIUM
Abstract
(EN)
Method for producing field oxide for a silicon-base integrated circuit. According to the invention, the production method includes the following steps: a) thermal nitriding of the substrate (20) and/or of the native oxide which covers it, in order to form a nitrided layer (22) on its surface, b) deposition of a thin film (24) of silicon nitride on the nitrided layer, c) deposition of a thin layer (26) of silicon oxide on the nitride film, d) deposition of a thick layer (28) of silicon nitride on the oxide layer, e) anisotropic dry etching of the stack formed by the nitride layer, the oxide layer, the oxide film and the nitrided layer, to expose the areas of the substrate where the field oxide needs to be formed, then f) thermal oxidation of the structure obtained in e) in order to form field oxide in said areas.
(FR)
Le procédé de fabrication selon l'invention comprend les étapes suivantes: a) nitruration thermique du substrat (20) et/ou de l'oxyde natif le recouvrant pour former une couche nitrurée (22) sur sa surface, b) dépôt d'un film mince (24) de nitrure de silicium sur la couche nitrurée, c) dépôt d'une couche mince (26) d'oxyde de silicium sur le film de nitrure, d) dépôt d'une couche épaisse (28) de nitrure de silicium sur la couche d'oxyde, e) gravure sèche anisotrope de l'empilement formé par la couche de nitrure, la couche d'oxyde, le film d'oxyde et la couche nitrurée, afin de découvrir les régions du substrat dans lesquelles l'oxyde de champ doit être réalisé puis, f) oxydation thermique de la structure obtenue en e) pour former l'oxyde de champ dans lesdites régions.
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