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1. WO1990014691 - LOW TRIGGER VOLTAGE SCR PROTECTION DEVICE AND STRUCTURE

Publication Number WO/1990/014691
Publication Date 29.11.1990
International Application No. PCT/US1990/002610
International Filing Date 14.05.1990
Chapter 2 Demand Filed 13.12.1990
IPC
H01L 27/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
CPC
H01L 27/0248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
H01L 27/0262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
0251for MOS devices
0259using bipolar transistors as protective elements
0262including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Applicants
  • DAVID SARNOFF RESEARCH CENTER, INC. [US]/[US]
Inventors
  • AVERY, Leslie, Ronald
Agents
  • BURKE, William, J.
Priority Data
516,49804.05.1990US
8911360.917.05.1989GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LOW TRIGGER VOLTAGE SCR PROTECTION DEVICE AND STRUCTURE
(FR) STRUCTURE ET DISPOSITIF DE PROTECTION MUNI D'UN REDRESSEUR AU SILICIUM COMMANDE A BASSE TENSION DE DECLENCHEMENT
Abstract
(EN)
A device for protecting an integrated circuit from transient energy is disclosed. This device provides an SCR having a reduced ''snap-back'' trigger voltage.
(FR)
Un dispositif pour la protection d'un circuit intégré contre l'énergie transitoire prévoit un redresseur au silicium commandé à une tension de déclenchement à ''retour-spontané'' réduite.
Also published as
Latest bibliographic data on file with the International Bureau