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1. WO1990014683 - ELECTRON BEAM MACHINING OF MATERIALS

Publication Number WO/1990/014683
Publication Date 29.11.1990
International Application No. PCT/GB1990/000783
International Filing Date 18.05.1990
Chapter 2 Demand Filed 05.12.1990
IPC
H01J 37/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
31for cutting or drilling
CPC
B82Y 30/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
H01J 37/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
31for cutting or drilling
Applicants
  • SPENCE, John [GB]/[US]
  • HUMPHREYS, Colin, John [GB]/[GB]
  • DEVENISH, Robert, Walter [GB]/[GB]
  • BULLOUGH, Timothy, John [GB]/[GB]
Inventors
  • SPENCE, John
  • HUMPHREYS, Colin, John
  • DEVENISH, Robert, Walter
  • BULLOUGH, Timothy, John
Agents
  • CULLIS, Roger
Priority Data
8911394.818.05.1989GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELECTRON BEAM MACHINING OF MATERIALS
(FR) USINAGE PAR FAISCEAU A ELECTRONS
Abstract
(EN)
A method of machining of substrates comprises successively removing a plurality of atoms from a substrate by bombardment with a narrow beam of electrons in a scanning electron microscope.
(FR)
Un procédé pour l'usinage de substrats comprend l'enlèvement successif, sur un substrat, d'une pluralité d'atomes par bombardement dudit substrat à l'aide d'un faisceau d'électrons étroit disposé dans un microscope électronique à balayage.
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