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1. WO1990013133 - VOLTAGE NONLINEAR RESISTOR AND METHOD OF PRODUCING THE SAME

Publication Number WO/1990/013133
Publication Date 01.11.1990
International Application No. PCT/JP1989/001154
International Filing Date 10.11.1989
IPC
H01C 7/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
CRESISTORS
7Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
10voltage responsive, i.e. varistors
105Varistor cores
CPC
H01C 7/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
CRESISTORS
7Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
10voltage responsive, i.e. varistors
105Varistor cores
Applicants
  • UBE INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • MASUYAMA, Takeshi [JP]/[JP] (UsOnly)
  • KITOH, Ryozo [JP]/[JP] (UsOnly)
  • FUKUDA, Koichi [JP]/[JP] (UsOnly)
  • ARIMURA, Noriaki [JP]/[JP] (UsOnly)
Inventors
  • MASUYAMA, Takeshi
  • KITOH, Ryozo
  • FUKUDA, Koichi
  • ARIMURA, Noriaki
Agents
  • AOKI, Akira
Priority Data
1/9649418.04.1989JP
1/9741719.04.1989JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) VOLTAGE NONLINEAR RESISTOR AND METHOD OF PRODUCING THE SAME
(FR) RESISTANCE NON LINEAIRE EN TENSION ET PROCEDE POUR SA FABRICATION
Abstract
(EN)
A voltage nonlinear resistor essentially comprises inorganic semiconductor fine particles, and at least one of the oxides of metal elements of the groups IIIA, IIIB, IVA, IVB, VA, VIIB and VIII of the periodic table, and includes an inorganic insulating film layer that covers the surfaces of the semiconductor fine particles. The semiconductor fine particles are used as a starting material for the inorganic semiconductor, and are subjected to at least one time of baking step at a temperature higher than 1000°C and to at least one time of pulverizing step after at least one time of the baking step. The semiconductor fine particles are mixed with a starting compound that contains at least one of said metal elements and that forms inorganic oxides thereof, and the mixture is baked at a temperature higher than 1000°C such that an insulating film layer consisting essentially of at least one inorganic oxide of said metal element is formed on the surfaces of the semiconductor fine particles.
(FR)
Une résistance non linéaire en tension comprend essentiellement de fines particules semi-conductrices inorganiques, et au moins un des oxydes des éléments métalliques des groupes IIIA, IIIB, IVA, IVB, VA, VIIB et VIII du tableau périodique, et renferme une couche de film isolant inorganique qui recouvre les surfaces des fines particules semi-conductrices. Ces dernières servent de produit de départ pour le semi-conducteur inorganique, et sont soumises au moins une fois à une étape de cuisson à une température supérieure à 1000°C, suivie d'au moins une étape de pulvérisation. Les fines particules de semi-conducteur sont mélangées avec un composé de départ qui contient au moins l'un desdits éléments métalliques et forme des oxydes inorganiques de ceux-ci, et le mélange est cuit à une température supérieure à 1000°C, de sorte qu'une couche de film isolant constituée essentiellement d'au moins un oxyde inorganique dudit élément métallique est formée sur les surfaces des fines particules de semi-conducteur.
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