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1. WO1989010007 - BURIED JUNCTION INFRARED PHOTODETECTORS

Publication Number WO/1989/010007
Publication Date 19.10.1989
International Application No. PCT/US1989/000967
International Filing Date 13.03.1989
IPC
H01L 27/144 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
H01L 31/0216 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 31/103 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
103the potential barrier being of the PN homojunction type
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 27/1446
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
1446in a repetitive configuration
H01L 31/02161
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
H01L 31/1032
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
103the potential barrier being of the PN homojunction type
1032the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
H01L 31/1832
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1828the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
1832comprising ternary compounds, e.g. Hg Cd Te
Applicants
  • SANTA BARBARA RESEARCH CENTER [US]/[US]
Inventors
  • COCKRUM, Charles, A.
  • BARTON, Jeffrey, B.
  • SCHULTE, Eric, F.
Agents
  • SCHUBERT, William, C. @
Priority Data
178,68007.04.1988US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) BURIED JUNCTION INFRARED PHOTODETECTORS
(FR) PHOTODETECTEURS INFRAROUGES A JONCTIONS NOYEES
Abstract
(EN)
An array of photodiodes is comprised of a Group II-VI material, such as HgCdTe, which is processed to form a plurality of diode junctions. The array is fabricated by a method which comprises a first step of providing a radiation absorbing base (12) of p-type Hg(1-x)CdxTe material. Each of the photodiodes is fabricated by depositing a layer (18) of wider bandgap passivation material over the substrate, depositing a photomask layer (26) over the passivation layer and selectively removing the passivation layer through openings within the photomask layer. One method of removing the passivation layer (18) is by ion milling which also converts the underlying p-type substrate material to n-type material. The lattice damage caused by the ion milling extends laterally outward such that the n-type region (14), and associated p-n diode junction (16), is disposed beneath the passivation layer (18). Alternatively, the substrate material is converted to an opposite type of conductivity by depositing a layer of source material followed by a diffusion process.
(FR)
Un réseau de photodiodes est constitué d'un matériau du groupe II-VI, tel que HgCdTe, que l'on traite pour former une pluralité de jonctions de diodes. Ce réseau est fabriqué par un procédé consistant tout d'abord à réaliser une base absorbant le rayonnement (12), constituée d'un matériau du type p, à savoir Hg(1-x)CdxTe). Chacune des photodiodes est fabriquée par dépôt sur le substrat d'une couche (18) de matière de passivation à largeur de bande interdite plus grande, par dépôt d'une couche de photomasque (26) sur la couche de passivation et par élimination sélective de ladite couche de passivation à travers des ouvertures pratiquées à l'intérieur de la couche de photomasque. Un procédé d'élimination de cette couche de passivation (18) est le broyage ionique qui convertit également le matériau de substrat de type p sous-jacent en matériau de type n. La détérioration du réseau cristallin provoquée par le broyage ionique s'étend latéralement vers l'extérieur de sorte que la région de type n (14), et la jonction de diode p-n (16) qui lui est adjointe, sont disposées au-dessous de la couche de passivation (18). Dans une variante, le matériau de substrat est converti en un type opposé de conductivité par dépôt d'une couche de matériau source suivi d'un processus de diffusion.
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