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Machine translation
1. (WO1989009294) PRECURSORS FOR METAL FLUORIDE DEPOSITION AND USE THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/1989/009294 International Application No.: PCT/GB1989/000338
Publication Date: 05.10.1989 International Filing Date: 31.03.1989
Chapter 2 Demand Filed: 06.12.1989
IPC:
C23C 16/30 (2006.01)
Applicants: MACKEY, Kevin, James[GB/GB]; GB (UsOnly)
VERE, Anthony, Worswick[GB/GB]; GB (UsOnly)
BRADLEY, Donald, Charlton[GB/GB]; GB (UsOnly)
FRIGO, Dario, Marcello[GB/NL]; NL (UsOnly)
THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNI[GB/GB]; C MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GR EAT BRITAIN AND NORTHERN IRELAND; Whitehall; London SW1A 2HB, GB (AllExceptUS)
FAKTOR, Jill (legal representative and executrix o[GB/GB]; GB (UsOnly)
Inventors: MACKEY, Kevin, James; GB
VERE, Anthony, Worswick; GB
BRADLEY, Donald, Charlton; GB
FRIGO, Dario, Marcello; NL
FAKTOR, Marc, Marian (deceased); null
Agent: BECKHAM, Robert, William; Ministry of Defence Procurement Executive, Patents 1A(4) Room 2014, Empress State Building Lillie Road London SW6 1TR, GB
Priority Data:
8807793.831.03.1988GB
8810404.703.05.1988GB
Title (EN) PRECURSORS FOR METAL FLUORIDE DEPOSITION AND USE THEREOF
(FR) PRECURSEURS POUR LE DEPOT DE FLUORURES DE METAL ET LEUR EMPLOI
Abstract:
(EN) A method for forming a layer of a Group II or III fluoride on a semiconductor substrate (e.g. as epitaxial insulating layer) comprising vapourising a precursor (I), where M is Be, Ca, Sr, Ba or lanthanide, b and d are 0 or 1. A, B, C and D are independently (IIA) or (IIB), X being O, S, NR, PR where R is H, alkyl, perfluroalkyl; Y is perfluoroalkyl, fluoroalkenyl, fluoroalkylamine or fluoroalkenylamine; Z is H, F, alkyl, perfluoroalkyl or perfluoroalkenyl; and then decomposing the precursor vapour to form M fluoride. A preferred precursor for CaF2 is a calcium 1,1,1,5,5,5-hexafluor-2,4-pentanedione complex where b and d are 0.
(FR) Un procédé pour former une couche d'un fluorure du groupe II ou III sur un substrat semi-conducteur (par exemple comme couche épitaxiale isolante) consiste à vaporiser un précurseur (I), où M est Be, Ca, Sr, Ba ou lanthanide, b et d valent 0 ou 1. A, B, C et D sont indépendamment (IIA) ou (IIB), X étant O, S, NR, PR où R est H, alkyle, perfluoroakyl; Y est perfluoroalkyl, fluoroalkényl, fluoralkylamine ou fluoroalkénylamine; Z est H, F, alkyle, perfluoroalkyl ou perfluoroalkényl; et ensuite à décomposer la vapeur du précurseur pour former du fluorure de métal. Un précurseur préféré pour le CaF2 est un complexe de calcium 1,1,1,5,5,5-hexafluor-2,4-pentanedione où b et d valent 0.
Designated States: GB, JP, KR, US
European Patent Office (EPO) (AT, BE, CH, DE, FR, GB, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)