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Machine translation
1. (WO1989004550) ZONE-MELTING RECRYSTALLIZATION PROCESS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1989/004550    International Application No.:    PCT/US1988/004028
Publication Date: 18.05.1989 International Filing Date: 10.11.1988
Chapter 2 Demand Filed:    04.07.1989    
IPC:
H01L 21/20 (2006.01)
Applicants: KOPIN CORPORATION [US/US]; 695 Myles Standish Boulevard, Taunton, MA 02780 (US) (For All Designated States Except US).
FAN, John, C., C. [US/US]; (US) (For US Only).
ZAVRACKY, Paul, M. [US/US]; (US) (For US Only).
NARAYAN, Jagdish [US/US]; (US) (For US Only).
ALLEN, Lisa, P. [US/US]; (US) (For US Only).
VU, Duy-Phach [FR/US]; (US) (For US Only)
Inventors: FAN, John, C., C.; (US).
ZAVRACKY, Paul, M.; (US).
NARAYAN, Jagdish; (US).
ALLEN, Lisa, P.; (US).
VU, Duy-Phach; (US)
Agent: REYNOLDS, Leo, R. @; Hamilton, Brook, Smith & Reynolds, Two Militia Drive, Lexington, MA 02173 (US)
Priority Data:
120,016 13.11.1987 US
Title (EN) ZONE-MELTING RECRYSTALLIZATION PROCESS
(FR) PROCEDE DE RECRISTALLISATION PAR FUSION DE ZONE
Abstract: front page image
(EN)An improved method of zone-melting and recrystallizing of polysilicon film on an insulator over silicon is described.
(FR)Est décrit un procédé de fusion de zone et de recristallisation d'une couche mince de polysilicium sur un isolant, sur du silicium.
Designated States: AU, JP, KR, SU.
European Patent Office (AT, BE, CH, DE, FR, GB, IT, LU, NL, SE).
Publication Language: English (EN)
Filing Language: English (EN)