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1. (WO1989000341) METHOD OF FABRICATING SOLAR CELLS WITH ANTI-REFLECTION COATING
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1989/000341 International Application No.: PCT/US1987/001622
Publication Date: 12.01.1989 International Filing Date: 07.07.1987
IPC:
H01L 31/0216 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0216
Coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
MOBIL SOLAR ENERGY CORPORATION [US/US]; Middlesex Technology Center 4 Suburban Park Drive Billerica, MA 01821, US
Inventors:
CHAUDHURI, Arup, R.; US
RAVI, Kramadhati, Venkata; US
Agent:
PANDISCIO, Nicholas, A.; 125 CambridgePark Drive Cambridge, MA 02140, US
Priority Data:
Title (EN) METHOD OF FABRICATING SOLAR CELLS WITH ANTI-REFLECTION COATING
(FR) PROCEDE DE FABRICATION DE CELLULES SOLAIRES A COUCHES ANTI-REFLETS
Abstract:
(EN) A process of manufacturing silicon solar cells is described which is characterized by forming on the front surface of a silicon substrate a polysilazane coating by (a) first subjecting the substrate to an ammonia plasma treatment for a predetermined period of time so as to produce hydrogen implantation and (b) subjecting the substrate to a silane and ammonia plasma treatment to obtain additional hydrogen implantation and formation of a polysilazane coating. The polysilazane coating is etched to form a grid electrode pattern, and subsequently the exposed silicon on the front side of the substrate is coated with an adherent coating of a highly conductive metal so as to form a grid electrode. An aluminum coating is applied to the rear side of the substrate so as to form a back electrode. The aluminum coating is heated so as to alloy with the silicon substrate and thereby form an ohmic contact. The ammonia plasma treatment has the effect of enhancing the conversion efficiency of the solar cell by virtue of diffusion of hydrogen into the substrate. The heat treatment for alloying the aluminum tends to cause the implanted hydrogen to diffuse further into the substrate, thereby beneficially altering the bulk diffusion length characteristics of the substrate so as to decrease recombination of the minority carriers produced in response to the incident light.
(FR) Procédé de fabrication de cellules solaires au silicium caractérisé par la formation d'une couche de polysilazane sur la surface frontale d'un substrat en silicium, consistant (a) à soumettre le substrat à un traitement à base de plasma d'ammoniac pendant une période prédéterminée de temps, de manière à produire une implantation d'hydrogène, et (b) à soumettre le substrat à un traitement à base de plasma de silane et d'ammoniac afin d'obtenir une implantation d'hydrogène supplémentaire, et la formation d'une couche de polysilazane. On grave la couche de polysilazane afin de réaliser une configuration d'électrodes de grille, et ensuite on recouvre le silicium exposé sur le côté frontal du substrat d'une couche adhésive du métal hautement conducteur, de manière à former une électrode de grille. On applique au côté arrière du substrat une couche d'aluminium de manière à former une électrode arrière. La couche d'aluminium est chauffée afin de former un alliage avec le substrat et ainsi de réaliser un contact ohmique. Le traitement au plasma d'ammoniac a pour effet d'augmenter les performances de conversion de la cellule solaire grâce à la diffusion de l'hydrogène dans le substrat. Le traitement thermique dont le but est d'allier l'aluminium, tend à faire se diffuser davantage l'hydrogène implanté dans le substrat, modifiant ainsi favorablement les caractéristiques de longueur de diffusion volumique du substrat, de manière à diminuer la recombinaison des porteurs minoritaires produits en réaction à la lumière incidente.
Designated States: AU, CH, DE, GB, JP, KR, NL, SE
European Patent Office (BE, CH, FR, GB, IT, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0325606DE000003790981GB2215129KR1019890702258AU1987080382