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1. (WO1989000080) GAS INLET FOR A PLURALITY OF VARIOUS REACTION GASES IN REACTION VESSELS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1989/000080 International Application No.: PCT/DE1988/000399
Publication Date: 12.01.1989 International Filing Date: 30.06.1988
IPC:
B01F 3/02 (2006.01) ,B01J 4/00 (2006.01) ,C23C 16/455 (2006.01) ,C30B 25/14 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
F
MIXING, e.g. DISSOLVING, EMULSIFYING, DISPERSING
3
Mixing, e.g. dispersing, emulsifying, according to the phases to be mixed
02
gases with gases or vapours
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
4
Feed devices; Feed or outlet regulating devices
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
14
Feed and outlet means for the gases; Modifying the flow of the reactive gases
Applicants:
AIXTRON GMBH [DE/DE]; Jülicher Str. 336-338 D-5100 Aachen, DE (AllExceptUS)
JÜRGENSEN, Holger [DE/DE]; DE (UsOnly)
Inventors:
JÜRGENSEN, Holger; DE
Agent:
MÜNICH, Wilhelm; Kanzlei Münich, Steinmann, Schiller Willibaldstr. 36 D-8000 München 21, DE
Priority Data:
P 37 21 637.630.06.1987DE
Title (EN) GAS INLET FOR A PLURALITY OF VARIOUS REACTION GASES IN REACTION VESSELS
(FR) ADMISSION D'UNE PLURALITE DE GAZ DE REACTION DIFFERENTS DANS DES REACTEURS
Abstract:
(EN) A gas inlet for a plurality of various reaction gases in reaction vessels, in which the gases flow at a high flow rate, with supply lines of substantially smaller cross-section than the reaction vessel, is characterized by the combination of the following features: the gas inlet has a part (1) with a conicoidal internal contour (4) whose cross-section matches that of the reaction vessel and which is arranged at one end (3) of the reaction vessel (not shown) through which the gases flow, the individual supply lines (5, 6) open into the region of the focus of the part with conicoidal internal contour, the gas outlet orifices (7, 8) of the supply lines are directed towards the apex of the part with conicoidal internal contour.
(FR) Une admission de gaz par laquelle pénètrent une pluralité de gaz de réaction différents dans un réacteur, les gaz s'écoulant à haute vitesse, comprend des conduits d'alimentation dont la section transversale est sensiblement inférieure à celle du réacteur et se caractérise par une combinaison des attributs suivants: l'admission de gaz présente une partie (1) à contour intérieur conique (4) dont la section transversale correspond à la section transversale du réacteur, et qui est agencée à une extrémité (3) du réacteur (non représenté) à travers lequel s'écoulent les gaz, les conduits individuels d'alimentation (5, 6) s'ouvrent environ au point focal de la partie à contour intérieur conique, les orifices de sortie de gaz (7, 8) des conduits d'alimentation sont dirigés vers le sommet de la partie à contour conique.
Designated States: JP, US
European Patent Office (AT, BE, CH, DE, FR, GB, IT, LU, NL, SE)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
EP0324811US5441703