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1. (WO1987003743) STRUCTURE AND METHOD OF FABRICATING A TRAPPING-MODE PHOTODETECTOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1987/003743 International Application No.: PCT/US1986/002516
Publication Date: 18.06.1987 International Filing Date: 24.11.1986
IPC:
H01L 21/368 (2006.01) ,H01L 31/0296 (2006.01) ,H01L 31/103 (2006.01) ,H01L 31/109 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
368
using liquid deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
0296
including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
103
the potential barrier being of the PN homojunction type
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
109
the potential barrier being of the PN heterojunction type
Applicants:
SANTA BARBARA RESEARCH CENTER [US/US]; 75 Coromar Drive Goleta, CA 93017, US
Inventors:
NORTON, Paul, R.; US
Agent:
TAYLOR, Ronald, L. @; Hughes Aircraft Company Post Office Box 45066 Bldg. C1, M/S A-126 Los Angeles, CA 90045-0066, US
Priority Data:
804,71905.12.1985US
Title (EN) STRUCTURE AND METHOD OF FABRICATING A TRAPPING-MODE PHOTODETECTOR
(FR) STRUCTURE ET PROCEDE DE FABRICATION D'UN PHOTODETECTEUR A MODE DE PIEGEAGE
Abstract:
(EN) Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductor material that includes a region of first conductivity type and a region of second conductivity type where the region of first conductivity type overlies and covers the junctions with the region of second conductivity type and where the junction between the first and second regions separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.
(FR) Des photodétecteurs, qui produisent des détectivités proches de la détectivité maximum théorique, comprennent un substrat à isolation électrique portant un corps de matériau semiconducteur qui comprend une région d'un premier type de conductivité et une région d'un second type de conductivité, où la région d'un premier type de conductivité surplombe et recouvre la jonction avec la région d'un second type de conductivité, et/ou la jonction entre la première et la seconde région sépare les porteurs minoritaires situés dans le région d'un second type de conductivité des porteurs majoritaires situés dans la région d'un premier type de conductivité. Lesdits photodétecteurs produisent des détectivités élevées, où le rayonnement arrivant sur les détecteurs comportent des longueurs d'ondes situées entre environ 1 et environ 25 microns ou davantage, en particulier dans de mauvaises conditions d'environnement.
Designated States: European Patent Office (DE, FR, IT, NL)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0248881