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1. (WO1987003741) SELECTIVE DEPOSITION PROCESS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1987/003741 International Application No.: PCT/US1986/002568
Publication Date: 18.06.1987 International Filing Date: 28.11.1986
IPC:
C23C 16/04 (2006.01) ,C23C 16/48 (2006.01) ,H01L 21/268 (2006.01) ,H01L 21/285 (2006.01) ,H01L 21/3205 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
04
Coating on selected surface areas, e.g. using masks
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
48
by irradiation, e.g. photolysis, radiolysis, particle radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
268
using electromagnetic radiation, e.g. laser radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
Applicants:
NCR CORPORATION [US/US]; World Headquarters Dayton, OH 45479, US
Inventors:
METZ, Werner, Adam, Jr.; US
COLLINS, George, Joseph; US
Agent:
SALYS, Casimer, K. @; Law Department Intellectual Property Section NCR Corporation, World Headquarters Dayton, OH 45479, US
Priority Data:
804,72705.12.1985US
Title (EN) SELECTIVE DEPOSITION PROCESS
(FR) PROCEDE DE DEPOT SELECTIF
Abstract:
(EN) In the process for depositing metallic films in spatially selective regions on a semiconductor substrate (1), the substrate is illuminated with coherent photon energy which is selectively absorbed by patterned regions (6) of the substrate (1), which patterned regions (6) have accentuated absorption characteristics suitable to cause localized heating and pyrolytic reaction with selected ambient gases. The reactant gases are transparent to the illuminating radiation. Matching of the coherent photon energy wavelength with the photon absorption characteristics of the selected regions (6) in combination with pulsed operation of a laser (19) providing the photon energy can further localize the spatial selectivity. Optical free carrier absorption occurs preferentially in heavily doped regions, which regions are readily defined using known techniques for patterned doping. The deposited films thereafter act as nucleation sites for more conventional forms of chemical vapor deposition.
(FR) Procédé de dépôt de films métalliques dans des régions spatialement sélectives sur un substrat semiconducteur (1). Le substrat est exposé à une énergie photonique cohérente qui est absorbée sélectivement par des régions (6) du substrat (1) présentant des configurations données ainsi que des caractéristiques d'absorption accentuées provoquant un échauffement localisé et une réaction pyrolytique avec des gaz environnants sélectionnés. Les gaz réactifs sont transparents à la radiation de l'éclairage. La correspondance entre la longueur d'ondes de l'énergie photonique cohérente et les caractéristiques d'absorption de photons des régions sélectionnées (6) en combinaison avec le fonctionnement impulsionnel d'un laser (19) produisant l'énergie photonique peuvent localiser ultérieurement la sélectivité spatiale. L'absorption du support optique libre a lieu de préférence dans des régions fortement dopées, ces régions étant aisément définies en utilisant des techniques connues de dopage à configurations. Les films ainsi déposés servent ensuite de sites de nucléation pour des formes plus conventionnelles de dépôt de vapeur chimique.
Designated States: JP
European Patent Office (DE, GB, NL)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0248883DE000003689073