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1. (WO1987003423) SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1987/003423 International Application No.: PCT/JP1986/000579
Publication Date: 04.06.1987 International Filing Date: 12.11.1986
IPC:
H01L 27/02 (2006.01) ,H01L 27/06 (2006.01) ,H01L 27/092 (2006.01) ,H01L 27/108 (2006.01) ,H01L 27/105 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
088
the components being field-effect transistors with insulated gate
092
complementary MIS field-effect transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
108
Dynamic random access memory structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
Applicants:
HITACHI, LTD. [JP/JP]; 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo 101, JP (AllExceptUS)
KITSUKAWA, Goro [JP/JP]; JP (UsOnly)
ITOH, Kiyoo [JP/JP]; JP (UsOnly)
HORI, Ryoichi [JP/JP]; JP (UsOnly)
WATANABE, Takao [JP/JP]; JP (UsOnly)
SHIMOHIGASHI, Katsuhiro [JP/JP]; JP (UsOnly)
HOMMA, Noriyuki [JP/JP]; JP (UsOnly)
Inventors:
KITSUKAWA, Goro; JP
ITOH, Kiyoo; JP
HORI, Ryoichi; JP
WATANABE, Takao; JP
SHIMOHIGASHI, Katsuhiro; JP
HOMMA, Noriyuki; JP
Agent:
OGAWA, Katuo; Patent Department of Hitachi, Ltd. 5-1, Marunouchi 1-chome Chiyoda-ku Tokyo 100, JP
Priority Data:
60/25850620.11.1985JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF A SEMI-CONDUCTEURS
Abstract:
(EN) To prevent the injection of minority carriers into a substrate when the potential undergoes changes due to noise or the like. In a semiconductor device having a substrate and sources and drains of insulated gate-type field-effect transistors or having collectors, bases and emitters of bipolar transistors in a plurality of isolation layers that are electrically isolated in the substrate, a voltage is applied to the substrate or to said plurality of isolation layers, said voltage falling outside a range in which the voltage applied to said sources and drains or to said collectors, bases and emitters can be varied.
(FR) Afin d'empêcher l'injection de porteurs minoritaires dans un substrat lorsque le potentiel subit des variations dues au bruit ou analogue, dans un dispositif à semi-conducteurs possédant un substrat et des sources et des drains de transistors à effet de champ du type à portes isolées, ou possédant des collecteurs, des bases et des émetteurs de transistors bipolaires dans une pluralité de couches d'isolation qui sont isolées électriquement dans le substrat, une tension est appliquée au substrat ou à ladite pluralité de couches isolantes, cette tension se situant à l'extérieur de la plage dans laquelle la tension appliquée auxdites sources et drains ou auxdits collecteurs, bases et émetteurs peut-être modifiée.
Designated States: KR, US
European Patent Office (DE, FR, GB)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP0245515US5497023US6208010US20020153591US20030178699KR10199500075753
KR1019950002273*KR1019880700468