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1. (WO1985004759) METHOD OF TRANSFERRING IMPURITIES BETWEEN DIFFERENTLY DOPED SEMICONDUCTOR REGIONS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1985/004759 International Application No.: PCT/US1985/000502
Publication Date: 24.10.1985 International Filing Date: 25.03.1985
IPC:
H01L 21/225 (2006.01) ,H01L 21/285 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225
using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
Applicants:
AMERICAN TELEPHONE & TELEGRAPH COMPANY [US/US]; 550 Madison Avenue New York, NY 10022, US
Inventors:
OH, Kye, Hwan; US
Agent:
HIRSCH, A., E., Jr. @; Post Office Box 901 Princeton, NJ 08540, US
Priority Data:
597,92409.04.1984US
Title (EN) METHOD OF TRANSFERRING IMPURITIES BETWEEN DIFFERENTLY DOPED SEMICONDUCTOR REGIONS
(FR) PROCEDE DE TRANSFERT D'IMPURETES ENTRE DES REGIONS SEMI-CONDUCTRICES A DOPAGE DIFFERENT
Abstract:
(EN) In semiconductor devices of extremely small dimensions, the problem of shorting together of adjacent, differently doped regions (12, 14) by a contact layer deposited through a window (17) which, owing to the smallness of the region dimensions, unavoidably exposes a surface portion of the adjacent region (12) not intended to be contacted, is solved by the use of a transfer layer (18) deposited first in the window which, upon heating, transfers impurities from the region (14) intended to be contacted to the unintentionally exposed portion of the adjacent region (12). The transferred impurities convert the exposed portion of the adjacent region to the same conductivity type as the impurity source region (14), thereby preventing shorting together of the contacted region (14) with the remaining, unconverted portion of the adjacent region.
(FR) Dans des dispositifs semi-conducteurs de dimensions extrêmement réduites, un problème est posé par le court-circuitage de régions adjacentes à dopage différent (12, 14) par une couche de contact déposée au travers d'une fenêtre (17) qui, à cause des dimensions très réduites de la région, expose inévitablement une partie de surface de la région adjacente (12) qui n'est pas destinée à être mise en contact; ce problème peut être résolu par l'utilisation d'une couche de transfert (18) déposée tout d'abord dans la fenêtre et qui transfère, lorsqu'on la chauffe, des impuretés de la région (14) destinée à être mise en contact à la partie de la région adjacente (12) exposée involontairement. Les impuretés transférées convertissent la partie exposée de la région adjacente au même type de conductivité que la région de source d'impuretés (14), empêchant ainsi tout court-circuitage entre la région mise en contact (14) et la partie non convertie restante de la région adjacente.
Designated States: JP
European Patent Office (AT, BE, CH, DE, FR, GB, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0181344