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1. (WO1985004491) PROCESS FOR FABRICATING A MONOLITHIC INTEGRATED OPTICAL DEVICE COMPRISING A SEMICONDUCTOR LASER AND DEVICE OBTAINED BY SAID PROCESS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1985/004491 International Application No.: PCT/FR1985/000067
Publication Date: 10.10.1985 International Filing Date: 29.03.1985
IPC:
G02B 6/12 (2006.01) ,G02F 1/025 (2006.01) ,H01L 33/00 (2006.01) ,H01S 5/026 (2006.01) ,H01S 5/10 (2006.01) ,H01S 5/125 (2006.01)
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10
of the optical waveguide type
12
of the integrated circuit kind
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
015
based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
025
in an optical waveguide structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
026
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
12
the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
125
Distributed Bragg reflector lasers (DBR-lasers)
Applicants:
MENIGAUX, Louis [FR/FR]; FR
CARENCO, Alain [FR/FR]; FR
SANSONETTI, Pierre [FR/FR]; FR
Inventors:
MENIGAUX, Louis; FR
CARENCO, Alain; FR
SANSONETTI, Pierre; FR
Agent:
SOCIETE FRANÇAISE POUR LA GESTION DES BREVETS D'AP; PLICATION NUCLEAIRE BREVATOME; 25, rue de Ponthieu; F-75008 Paris, FR
Priority Data:
84/0505330.03.1984FR
Title (EN) PROCESS FOR FABRICATING A MONOLITHIC INTEGRATED OPTICAL DEVICE COMPRISING A SEMICONDUCTOR LASER AND DEVICE OBTAINED BY SAID PROCESS
(FR) PROCEDE DE FABRICATION D'UN DISPOSITIF OPTIQUE INTEGRE MONOLITHIQUE COMPRENANT UN LASER A SEMICONDUCTEUR ET DISPOSITIF OBTENU PAR CE PROCEDE
Abstract:
(EN) Process for fabricating a monolithic integrated optical device comprising a semiconductor laser and an optical waveguide and device obtained by said process. A substrate (100) is provided with a profile having at least one step (102). There are deposited on said substrate, in a single epitaxy operation carried out in vapor phase, successively a first confinement layer (106), a guiding layer (108) of transparent material for the radiation emitted by the laser, a second confinement layer (110), an active layer (112), a third confinement layer (114), a contact layer (116). The transparent material (108) has a refraction index which is higher than the indexes of the confinement layers (106, 110) which are framing it. The thicknesses of the various layers are such that the active layer (112) of the lower piling (120i) is facing the transparent layer (108) of the higher piling (120s). Application to optical telecommunications.
(FR) Procédé de fabrication d'un dispositif optique intégré monolithique comprenant un laser à semiconducteur et un guide d'onde optique et dispositif obtenu par ce procédé. On donne au substrat (100) un profil présentant au moins une marche (102). On dépose sur ce substrat, par une seule opération d'éxpitaxie réalisé en phase vapeur, successivement une première couche de confinement (106), une couche de guidage (108) en un matériau transparent pour le rayonnement émis par le laser, une deuxième couche de confinement (110), une couche active (112), une troisième couche de confinement (114), une couche de contact (116). Le matériau transparent (108) a un indice de réfraction supérieur aux indices des couches de confinement (106, 110) qui l'encadrent. On donne aux épaisseurs des diverses couches des valeurs telles que la couche active (112) de l'empilement inférieur (120i) se trouve en regard de la couche transparente (108) de l'empilement supérieur (120s). Application en télécommunications optiques.
Designated States: JP, US
Publication Language: French (FR)
Filing Language: French (FR)
Also published as:
US4720468JPS61501669