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Machine translation
1. (WO1985003167) SEMICONDUCTOR STRUCTURE WITH RESISTIVE FIELD SHIELD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1985/003167    International Application No.:    PCT/US1984/002079
Publication Date: 18.07.1985 International Filing Date: 18.12.1984
IPC:
H01L 29/06 (2006.01)
Applicants: AMERICAN TELEPHONE & TELEGRAPH COMPANY [US/US]; 550 Madison Avenue, New York, NY 10022 (US)
Inventors: COMIZZOLI, Robert, Benedict; (US)
Agent: HIRSCH, A., E., Jr. @; Post Office Box 901, Princeton, NJ 08540 (US)
Priority Data:
567,370 30.12.1983 US
Title (EN) SEMICONDUCTOR STRUCTURE WITH RESISTIVE FIELD SHIELD
(FR) STRUCTURE DE SEMI-CONDUCTEUR AVEC ECRAN DE CHAMP RESISTIF
Abstract: front page image
(EN)A segmented semi-insulating polysilicon (SIPOS) layer (26) is used between electrodes (20, 22) making contact to the surface of a silicon device in order to shield the surface from the effects of charge on dielectric layers above the surface so as to maintain breakdown voltages. The segmenting of the SIPOS layer significantly increases the resistance thereof and therey limits leakage generated by the layer without significantly reducing its shielding capability.
(FR)Une couche (26) de polysilicium de demi-isolation segmenté (SIPOS) est utilisée entre les électrodes (20, 22) créant un contact à la surface d'un dispositif de silicium afin de protéger la surface des effets de charge sur des couches diélectriques au-dessus de la surface de manière à maintenir des tensions de rupture. La segmentation de la couche de SIPOS augmente de manière significative sa résistance et limite ainsi les fuites créées par la couche sans réduction significative de sa capacité de protection.
Designated States: JP.
European Patent Office (AT, BE, CH, DE, FR, GB, LU, NL, SE).
Publication Language: English (EN)
Filing Language: English (EN)