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1. (WO1985001613) HIGH DENSITY MOSFET WITH FIELD OXIDE ALIGNED CHANNEL STOPS AND METHOD OF FABRICATING THE SAME

Pub. No.:    WO/1985/001613    International Application No.:    PCT/US1983/001959
Publication Date: Apr 11, 1985 International Filing Date: Dec 12, 1983
IPC: H01L 21/266
H01L 21/762
H01L 21/8234
H01L 21/8236
Applicants: HUGHES AIRCRAFT COMPANY
Inventors: CHEN, John, Y.
HENDERSON, Richard, C.
Title: HIGH DENSITY MOSFET WITH FIELD OXIDE ALIGNED CHANNEL STOPS AND METHOD OF FABRICATING THE SAME
Abstract:
A high-density MOSFET (10) having field oxide (24) self-aligned channel stops (26, 27) for device isolation and an optimal method of fabricating such a device. The process provides channel stops (26, 27) underlying and aligned with the edges of a field oxide layer (24) and allows the dopant concentration of the channel stops (26, 27) to be established separately from that of the active device channel region (16) by use of an independent channel stop implant. The active devices (10) thus formed require minimal isolation area, have a high field threshold voltage, a low junction capacitance, and minimal body effect. They are particularly useful in high-speed, high-performance integrated circuits.