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1. WO1985000472 - SEMICONDUCTOR LASER WITH COUPLED MODULATOR

Publication Number WO/1985/000472
Publication Date 31.01.1985
International Application No. PCT/US1984/000882
International Filing Date 11.06.1984
IPC
H01S 5/026 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
H01S 5/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
14External cavity lasers
CPC
H01S 5/0265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
0265Intensity modulators
H01S 5/1021
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
1021Coupled cavities
H01S 5/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
14External cavity lasers
Applicants
  • AMERICAN TELEPHONE & TELEGRAPH COMPANY [US]/[US]
Inventors
  • GORDON, Eugene, Irving
Agents
  • HIRSCH, A., E., Jr. @
Priority Data
511,84708.07.1983US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR LASER WITH COUPLED MODULATOR
(FR) LASER SEMI-CONDUCTEUR AVEC MODULATEUR COUPLE
Abstract
(EN)
A semiconductor heterojunction optical modulator section (30), having an anti-reflection coating (52) on its optical output beam facet (32), is located with an opposite facet (31) optically coupled to, and closely spaced from, a semiconductor heterojunction laser section (20) having substantially the same cross-section structure as the modulator section (30). The laser section is operated CW in a single mode. In this way, the output beam (50) emanating from the laser section (20) and passing through the anti-reflection coating (52) can be coupled into an optical fiber (60) for transmission purposes. This output beam (50) is substantially single frequency and is intensity modulated, in a signal-pattern independent fashion, in accordance with an electrical signal applied to the modulator section (30).
(FR)
Un élément modulateur semi-conducteur optique à hétérojonctions (30), possédant un revêtement antiréfléchissant (52) sur la facette (32) du faisceau de sortie optique, a une facette opposée (31) optiquement couplée mais avec un espacement réduit, à un élément laser semi-conducteur à hétérojonctions (20) dont la structure de coupe transversale est sensiblement la même que celle de l'élément modulateur (30). L'élément laser est actionné en ondes entretenues selon un mode simple. De cette manière, le faisceau de sortie (50) émanant de l'élément laser (20) et traversant le revêtement antiréfléchissant (52) peut être couplé dans une fibre optique (60) à des fins de transmission. Ce faisceau de sortie (50) est essentiellement de fréquence simple et son intensité est modulée, d'une manière indépendante de la configuration du signal, en conformité avec un signal électrique appliqué à l'élément modulateur (30).
Also published as
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