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1. (WO1984000244) FOUR-STATE ROM CELL WITH INCREASED GAIN DIFFERENTIAL BETWEEN STATES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1984/000244 International Application No.: PCT/US1983/000643
Publication Date: 19.01.1984 International Filing Date: 02.05.1983
IPC:
G11C 11/56 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56
using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
Applicants:
Inventors:
Priority Data:
null30.12.1899null
Title (EN) FOUR-STATE ROM CELL WITH INCREASED GAIN DIFFERENTIAL BETWEEN STATES
(FR) CELLULE DE MEMOIRE MORTE (ROM) A QUATRE ETATS PRESENTANT UNE DIFFERENCE DE GAIN ACCRUE ENTRE LES ETATS
Abstract:
(EN) A four-state ROM cell (10) is improved by providing a tapered potential gate area (26) between a source region (30) and a drain region (28) which allows for the effective gate width to be increased and the gate length to be decreased for each succeedingly higher gain state with a single program mask at the polysilicon gate deposition stage.
(FR) Une cellule de mémoire morte (ROM) à quatre états (10) est améliorée en réalisant une zone de porte de potentiel à section décroissante (26) entre une région de source (30) et une région de drain (28), ce qui permet d'accroître la largeur effective de la porte et de réduire la longueur de la porte pour chaque état de gain plus élevé successif avec un masque de programme unique pendant l'étape de dépôt de la porte en polysilicium.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0111534